Hydrogen plasma chemical cleaning of metallic substrates and silicon wafers

Korner, Norman; Beck, E.; Dommann, Alex; Onda, N.; Ramm, J.

doi:10.1016/0257-8972(95)02503-0

Cited by 70 publications

(21 citation statements)

References 23 publications

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“…While cold plasmas are used in industrial processes such as electronics cleaning (Korner et al, 1995), bonding of plastics (Vlachopoulou et al, 2009) or binding of dye to textile fibres (Naebe et al, 2010), their potential remains untapped in the food industry. Plasma generation at atmospheric pressure is of interest, both technically and commercially to the food industries because this can be implemented at ambient conditions, reduces cost, increases treatment speed and enables industrial applicability (Misra et al, 2011b).…”

Section: Introductionmentioning

confidence: 99%

In-package atmospheric pressure cold plasma treatment of strawberries

Misra¹,

Patil²,

Moiseev

et al. 2014

Journal of Food Engineering

328

150

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The ability to generate low temperature plasma at atmospheric pressure offers new opportunities to decontaminate biological materials, including fresh foods. In this study, strawberries were treated with atmospheric cold plasma (ACP), generated with a 60 kV dielectric barrier discharge (DBD) pulsed at 50 Hz, across a 40 mm electrode gap, generated inside a sealed package containing ambient air (42% relative humidity). The current-voltage characteristics revealed that the plasma operated in the filamentary regime. The background microflora (aerobic mesophillic bacteria, yeast and mould) of strawberries treated for 5 min was reduced by 2 log 10 within 24 h of post-ACP treatment. The respiration rate of ACP treated produce, measured by the closed system approach, showed no significant increase. The effect of ACP on strawberry colour and firmness was insignificant.

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Section: Introductionmentioning

confidence: 99%

In-package atmospheric pressure cold plasma treatment of strawberries

Misra¹,

Patil²,

Moiseev

et al. 2014

Journal of Food Engineering

328

150

View full text Add to dashboard Cite

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“…Because the epitaxial Ge film has a (001) surface (along the z axis) for light propagating along the z axis (backscattering configuration), the optical phonon mode appears in the z(xy)z or z(xЈxЈ)z scattering geometry but is forbidden in the z(xx)z or z(xЈyЈ)z, where the axes in the parentheses represent the directions of e i and e s ; xЈ and yЈ denote the (110) and (1)(2)(3)(4)(5)(6)(7)(8)(9)(10) directions. Therefore, polarized Raman measurements can be used to examine the crystallinity of the Ge film.…”

Section: Deposition Methodsmentioning

confidence: 99%

Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition

Thomas

Bharatan

Jones

et al. 2003

Journal of Elec Materi

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In this paper, we report on the growth of epitaxial Ge on a Si substrate by means of low-energy plasma-enhanced chemical vapor deposition (LEPECVD). A Si 1-x Ge x graded buffer layer is used between the silicon substrate and the epitaxial Ge layer to reduce the threading dislocation density resulting from the lattice mismatch between Si and Ge. An advantage of the LEPECVD technique is the high growth rate achievable (on the order of 40 Å/sec), allowing thick SiGe graded buffer layers to be grown faster than by other epitaxial techniques and thereby increasing throughput in order to make such structures more manufacturable. We have achieved relaxed Ge on a silicon substrate with a threading dislocation density of 1 × 10 5 cm −2 , which is 4-10x lower than previously reported results.

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“…The surface effects of plasma have important applications in the semiconductor industry, in cleaning procedures for substrates used for thin film and semiconductor technologies, and for plasma-enhanced chemical vapor deposition. Oxygen plasma is used most widely to remove organic contaminants from surfaces, but there has been recent interest in using hydrogen plasma for applications that require surface chemical cleaning to be performed with minimal physical damage [23][24][25][26][27]. Compagnini et al [9] reported that a plasma oxidation/reduction process could be used to produce Ag surfaces exhibiting SERS.…”

Section: Introductionmentioning

confidence: 99%