Hydrogen passivation of ultra-thin low-temperature polycrystalline silicon films for electronic applications

Jaeger, Christian; Antesberger, Tobias; Stutzmann, M.

doi:10.1016/j.jnoncrysol.2007.09.040

Cited by 4 publications

(4 citation statements)

References 20 publications

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“…2͑a͔͒. After a second lithography step, 17 the precursor layers for the ALILE process ͑Al/oxide/a-Si͒ were deposited. The details of the layer preparation are described elsewhere.…”

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confidence: 99%

Random pn-junctions for physical cryptography

Jaeger

Algasinger

Rührmair

et al. 2010

Applied Physics Letters

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In this paper, we report on high-rectification pn-diodes (rectification ratios up to 2×107) prepared by aluminum-induced crystallization on crystalline Si-wafers, which exhibit highly random I(V) characteristics. We argue that arrays of such diodes can be employed as physical uncloneable functions for cryptography. To resolve the structure of the active diode area, focused-ion beam imaging was used. The I(V) curves of the diodes reveal that both a smaller polycrystalline silicon film thickness and a smaller diode size lead to increasing randomness due to the increasing inhomogeneity of thinner films and due to more pronounced grain boundary effects for smaller diodes.

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“…2͑a͔͒. After a second lithography step, 17 the precursor layers for the ALILE process ͑Al/oxide/a-Si͒ were deposited. The details of the layer preparation are described elsewhere.…”

mentioning

confidence: 99%

Random pn-junctions for physical cryptography

Jaeger

Algasinger

Rührmair

et al. 2010

Applied Physics Letters

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“…Hybrid LTPO circuits used for variable refresh rate displays combine the high current drive capability of LTPS TFTs with the low leakage of amorphous IGZO TFTs 11 . However, LTPS is typically produced from plasma‐enhanced chemical vapor deposited (PECVD) silicon, which is amorphous as‐deposited, contains excess hydrogen, and requires additional processing to crystallize and passivate defects, 14 leading to the diffusion of hydrogen within the backplane. The presence of excess hydrogen creates device instabilities in the IGZO TFTs adjacent to the LTPS TFTs 11 .…”

Section: Ametfts As a Replacement For Ltps Tfts In Active‐matrix Oled...mentioning

confidence: 99%

“…The high defect densities of LTPS TFTs often require post-treatment using oxygen plasma, water vapor, or hydrogen plasma, as well as post-metallization annealing; hydrogenation is a popular choice for passivating dangling bonds in both a-Si:H and LTPS alike. 14,15 Integrating LTPS with IGZO exposes the IGZO to hydrogen liberated from hydrogenated silicon during passivation by laser annealing. 16 The hydrogen may not only reduce field-effect mobility, but it can also increase off-state leakage current in the metaloxide TFTs.…”

Section: Introductionmentioning

confidence: 99%

“…However, LTPS has multiple process‐integration issues that complicate LTPO process development, including spatially heterogeneous electrical properties, high defect densities at grain boundaries and interfaces, and high surface roughness. The high defect densities of LTPS TFTs often require post‐treatment using oxygen plasma, water vapor, or hydrogen plasma, as well as post‐metallization annealing; hydrogenation is a popular choice for passivating dangling bonds in both a‐Si:H and LTPS alike 14,15 . Integrating LTPS with IGZO exposes the IGZO to hydrogen liberated from hydrogenated silicon during passivation by laser annealing 16 .…”

Section: Introductionmentioning

confidence: 99%

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Innovations in thin‐film electronics for the new generation of displays

Zeumault,

Mendez,

Brewer

2024

J Soc Info Display

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Today's display industry faces transistor‐level challenges similar to those of complementary metal‐oxide semiconductor (CMOS) metal‐oxide semiconductor field‐effect transistors (MOSFETs) in the mid‐1990s. Learnings from MOSFETs inform the display industry's response to the limitations of silicon‐based thin‐film transistors (TFTs). Improvements sustaining Moore's Law drove the need to rethink MOSFET materials and structures. The display industry needs fundamental innovation at the device level. New thin‐film devices enable an inflection point in the use of displays, just as fin field‐effect transistor (FinFET) defined the inflection point in CMOS in the 2000s. This paper outlines two innovations in thin‐film device technology that offers improvement in image quality and power consumption of flat panel displays: amorphous metal gate TFTs (AMeTFTs) and amorphous metal nonlinear resistors (AMNRs). Linked through a single core material set based on mass‐producible, thin‐film amorphous metals, these two innovations create near‐ and long‐term roadmaps simplifying the production of high‐image quality, low‐power consumption displays on glass (now) and plastic (future). In particular, the field‐effect mobility of indium gallium zinc oxide (IGZO) AMeTFTs (55–72 cm2/Vs) exceeds that of IGZO TFTs developed by existing display manufacturers without the need for atomic layer deposition or vertical stacking of heterostructure semiconductor films, making AMeTFTs a natural choice for the new G8.5–G8.7 fabs targeting IGZO backplanes.

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Fabrication of large-grained thin polycrystalline silicon films on foreign substrates by titanium-assisted metal-induced layer exchange

Antesberger

Wassner

Kashani

et al. 2012

Journal of Applied Physics

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Metal-induced layer exchange (MILE) is a well-known method to grow large-grained high quality polycrystalline silicon on foreign substrates. We have modified the commonly used layer stack by an additional titanium interfacial layer (substrate/metal/titanium/oxide/amorphous silicon). The resulting layer exchange process is called titanium-assisted metal-induced layer exchange (Ti.MILE). For the investigated metals, Al (Ti.ALILE) and Ag (Ti.AgILE), the additional Ti layer does not affect the overall layer exchange process but results in a strong enlargement of the grains in the resulting polycrystalline silicon layer up to 250 μm. We have investigated the influence of the titanium interfacial layer on the process dynamics and grain growth. Furthermore, the structural and optical properties of the resulting polycrystalline silicon layer are investigated by means of different analysis methods.

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Hydrogen passivation of ultra-thin low-temperature polycrystalline silicon films for electronic applications

Cited by 4 publications

References 20 publications

Random pn-junctions for physical cryptography

Random pn-junctions for physical cryptography

Innovations in thin‐film electronics for the new generation of displays

Fabrication of large-grained thin polycrystalline silicon films on foreign substrates by titanium-assisted metal-induced layer exchange

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