Hydrogen passivation of interstitial Zn defects in hetero-epitaxial InP cell structures and influence on device characteristics

Ringel, S. A.; Chatterjee, B.; Hoffman, R. W.

doi:10.1002/(sici)1099-159x(199711/12)5:6<423::aid-pip194>3.0.co;2-t

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“…It is known that Zn interstitials ͑Zn i ͒ or Zn vacancies often form shallow levels in the band gap, while the Cr dopant forms deeper levels at 0.2 eV above the valence band maximum. [39][40][41] Moreover, all of these levels are subjected to a shift in the presence of a charge trapping effect of the grain boundaries in polycrystalline ͑Zn,Cr͒Te samples. 34,42 Therefore, the resistivity crossover of sample A is possibly due to the competition between the activation of Zn i and deeper dopant levels.…”

Section: Transport Propertiesmentioning

confidence: 99%

Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering

et al. 2008

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Chromium doped zinc telluride thin films with various doping concentrations are fabricated by magnetron sputtering. These films are ferromagnetic and the Curie temperature increases with Cr concentration. X-ray diffraction, transmission electron microscopy, and magnetic circular dichroism characterizations show that the films are free of Cr 1−x Te x impurities and the ferromagnetism is intrinsic. The transport study shows that the resistivity and magnetoresistance are governed by variable range hopping at low temperatures. A negative magnetoresistance as large as −57% is observed at 5 K. The magnetoresistance and its temperature dependence can be well explained by a model involving an increase in the localization length of carriers with a magnetic field in the hopping region. An anomalous Hall effect is also observed and a possible origin of the sign difference between the anomalous Hall resistance and ordinary Hall resistance is discussed.

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