Hydrogen passivation of electrically active defects in diamond

Growth of high quality diamond for surface conductive device applications is demonstrated. Mobility values higher than 140 cm 2 V −1 s −1 at sheet carrier concentrations of 2.5ϫ 10 12 cm −2 were achieved using a high growth rate process. Furthermore, control over the carrier transport statistics is demonstrated on both single crystal and polycrystalline diamond. This process allows the production of high quality electronic grade diamond with ability to tune carrier transport statistics. The mechanism behind this process is discussed.

Section: Introductionmentioning

confidence: 82%

Homoepitaxial diamond growth for the control of surface conductive carrier transport properties

Williams

Jackman

2004

“…[3][4][5][6][7]24 It is also shown that annealing of the films in the inert atmosphere or vacuum decreases the value of 300 by several orders of the magnitude. 24 Here we report the effect of annealing on the 300 of the sheets grown with different deposition conditions. Figure 10͑a͒ shows the I -V characteristics of a typical diamond sheet grown at 20 Torr in different stages of annealing with different annealing temperatures T a .…”

Section: Annealing Studiesmentioning

confidence: 99%

“…On the other hand CVD diamond exhibits a low value of the resistivity ͑on the order of 10 6 ⍀ cm͒. [3][4][5][6][7]24 It is also shown that annealing of the films in the inert atmosphere or vacuum decreases the value of 300 by several orders of the magnitude. 24 Here we report the effect of annealing on the 300 of the sheets grown with different deposition conditions.…”

Section: Annealing Studiesmentioning

confidence: 99%

“…5,24 Landtrass and Ravi suggested that the current conduction in polycrystalline diamond films is governed by dissolved hydrogen. 21 Hydrogen passivation of dangling bonds in amorphous silicon, 25 grain boundaries in polycrystalline silicon, 26 donor and acceptor impurities in silicon, 27,28 and shallow impurities in gallium phosphide 29 are well studied.…”

Section: Annealing Studiesmentioning

confidence: 99%

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Interesting trends in direct current electrical conductivity of chemical vapor deposited diamond sheets

Sikder

Misra

Palnitkar

et al. 2001

Self-supported diamond sheets of the thickness ranging from 15 to 30 μm were prepared using hot filament chemical vapor deposition technique. The controlled variation of the deposition parameters resulted in the sheets with varying amount of nondiamond impurities. Routine characterization of the sheets was carried out using scanning electron microscopy, x-ray diffractometry, Raman spectroscopy, Fourier transform infrared spectroscopy, and Positron annihilation spectroscopy techniques. Detailed measurements of room temperature electrical conductivity (σ300), current–voltage (I–V) characteristics, and annealing studies on the sheets deposited with various structural disorder have yielded useful information about the electrical conduction in this interesting material. σ300 and I–V characteristic measurements were done in sandwiched configuration taking care off the surface effects. The diamond sheets deposited at low deposition pressure (Pd<60 Torr) contain negligible nondiamond impurities and show σ300≅10−6–10−7 S.cm−1. The I–V characteristics in these sheets show space charge limited conduction behavior with I∝Vn and n>1, in high voltage range. In contrast the sheets deposited at higher pressure (60 Torr and higher), containing high concentration of nondiamond impurities, show a sharp reduction in the values of σ300. Interestingly, the conduction in these sheets is ohmic with n values nearly equal to unity. Similarly the sheets deposited with nitrogen also show a sharp reduction in σ300. Annealing of all types of diamond sheets results in a decrease in σ300 values by several orders of magnitude. In the sheets deposited at low Pd, the n values increase sharply with annealing. On the other hand the values of n in the sheets deposited at higher pressure remain constant with annealing. The above results are explained in terms of hydrogen abstraction from the traps and compensation of donor–acceptor pairs.

“…40 Landstrass et al proposed that the conduction might be caused by the movements of hydrogen and defects from nonactive sites during the annealing process. 41 Botev et al…”

mentioning

confidence: 99%

Hydrogen-terminated detonation nanodiamond: Impedance spectroscopy and thermal stability studies

Shi

Kundrát

et al. 2013

In this paper, we investigated the effect of hydrogen termination on the electrical properties and impedance spectra of detonation nanodiamond. The impedance spectra revealed that the hydrogen-termination process increases the electrical conductivity by four orders of magnitude at room temperature. An equivalent circuit has been proposed to correlate with the conduction mechanism. Arrhenius plot showed that there were two different activation energy levels located at 0.089 eV and 0.63 eV between 50 º C and 400 º C.The possible physical mechanism corresponding to these activation energy levels has been discussed. Hydrogen-terminated detonation nanodiamond has been further annealed at different temperatures prior to FTIR and XPS measurements in order to understand their thermal stability. The results demonstrated that the surface oxidization occurred between 100 º C and 150 º C. However, the C-H bonds could partially survive when the temperature reaches 400 º C in air.