Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

Kang, B. S.; Mehandru, R.; Kim, S.; Ren, F.; Gillespie, J.; Moser, Neil; Jessen, Gregg H.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

doi:10.1063/1.1759372

Cited by 31 publications

(11 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…AlGaN layers with 30% Al concentration contain 5-10 times higher channel sheet densities compared with GaAs or InP HEMTs. By functionalizing the gate area of an HEMT sensor for sensing materials, the AlGaN/GaN sensors have been demonstrated for H 2 [21], CO [22]- [24], NO [25], [26], NO 2 [26]- [28], NH 3 [25], [29], [30], CH 4 [31], H 2 S [32], [33], and C 2 H 2 [34]. So far, very few results of acetone detection with AlGaN/GaN devices have been reported [35].…”

Section: Introductionmentioning

confidence: 99%

Characterization of an Acetone Detector Based on a Suspended WO₃-Gate AlGaN/GaN HEMT Integrated With Microheater

Sun¹,

Sokolovskij²,

Iervolino³

et al. 2019

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO 3 ) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working temperature (300 • C) increased the sensitivity to up to 25.7% and drain current change I DS to 0.31 mA for 1000-ppm acetone in dry air. The transient characteristics of the sensor exhibited stable operation and good repeatability at different temperatures. For 1000-ppm acetone concentration, the measured response and recovery times reduced from 148 and 656 to 48 and 320 s as the temperature increased from 210 • C to 300 • C. The sensitivity to 1000-ppm acetone gas was significantly greater than the sensitivity to ethanol, ammonia, and CO gases, showing low cross-sensitivity. These results demonstrate a promising step toward the realization of an acetone sensor based on the suspended AlGaN/GaN HEMTs.

show abstract

Section: Introductionmentioning

confidence: 99%

Characterization of an Acetone Detector Based on a Suspended WO₃-Gate AlGaN/GaN HEMT Integrated With Microheater

Sun¹,

Sokolovskij²,

Iervolino³

et al. 2019

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5][6][7][8][9][10][11] The GaN materials system has a high breakdown field, can operate at high temperatures ͑ϳ500°C͒ and has reasonable thermal conductivity if bulk wafers are available. 28 There are also applications for detection of combustion gases for fuel leak detection in spacecraft, automobiles and aircraft, fire detectors, exhaust diagnosis and emissions from industrial processes. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] There is a strong need to develop hydrogen sensors for use with proton-exchange membrane and solid oxide fuel cells for spacecraft and other long-term applications.…”

Section: Introductionmentioning

confidence: 99%

Characterization of bulk GaN rectifiers for hydrogen gas sensing

Voss

Gila

Pearton

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

Pd and Pt Schottky diodes were fabricated on free-standing 2-in.-diameter GaN substrates prepared by a combination of hydride vapor phase epitaxy of ϳ350 m onto sapphire, substrate removal and subsequent growth of 3 m of epi GaN by metalorganic chemical vapor deposition. Vertical diodes with Ti/ Al/ Pt/ Au back contacts annealed at 850°C for 30 s showed excellent rectification with an on/off ratio of ϳ100 at 1.5 V / −10 V. Both forward turn-on and reverse breakdown voltages showed negative temperature coefficients. Pd and Pt diodes showed detection of 10 ppm H 2 in N 2 at 25°C, with fast ͑Ͻ10 s͒ recovery times upon removal of hydrogen from the measurement ambient. The Pt showed higher detection sensitivity than Pd. Detection of C 2 H 4 and C 2 H 6 required much higher temperatures ͑ϳ450°C͒ and concentrations ͑10%͒ of the gases in N 2 than hydrogen detection.

show abstract

“…The changes are a magnitude larger than for Pt/GaN Schottky diodes and a factor of five times larger than for Sc 2 O 3 /AlGaN/GaN metal–oxide–semiconductor diodes under similar conditions. [ 177 ]…”

Section: The Hydrogen Sensing Performance Of Schottky Diode Capacitor and Fet Type Sensorsmentioning

confidence: 99%

Work Function‐Based Metal–Oxide–Semiconductor Hydrogen Sensor and Its Functionality: A Review

Sahoo

Kale

2021

Adv Materials Inter

View full text Add to dashboard Cite

Solar PV and wind energy conversion systems convert input energy directly to electricity, are techno-economically viable, and have already achieved grid parity. [3,4] Though renewables fulfill most modern energysource criteria, they still possess low energy density, are challenging to transport, less efficient, costly, and are intrinsically intermittent, thus requiring a storage media.Hydrogen, a less popular renewable, can be used as a fuel as apart from being abundant gas, possesses high energy density, [5] exhibits better combustion characteristics, [5] owes a nonpolluting nature, [6] and has several other favorable properties, listed in Table 1. Hydrogen is a promising alternative energy source [6,7] that overcomes most of the challenges faced by classical renewables.Figure 2 describes hydrogen energy transformation from primary energy sources to the end-users in an integrated way. The hydrogen production, storage, transportation and delivery, application, awareness and capacity building, safety codes and standards are all interrelated to form the hydrogen energy system. The two prime methods of producing hydrogen are i) from the conventional process, and ii) using renewable energy sources (such as biomass, solar, wind, and hydro). Hydrogen possesses significantly higher gravimetric energy density than other storage techniques (such as batteries, pumped hydropower, supercapacitors, Flywheels, pressurized air). The use of abundant renewable energy when available, hydrogen production, and storage is an optimal choice. Hydrogen can be stored as pressurized gas or as a cryogenic liquid or solid fuel. [27] Storage of hydrogen as a gas typically requires high-pressure tanks (350-700 bar tank pressure). Due to the low boiling point (−252.8 °C at atmospheric pressure), liquid hydrogen storage requires cryogenic temperature.The conventional conversion of fossil fuel feedstock to hydrogen includes steam-methane reforming, thermal cracking of natural gas, thermal decomposition (partial oxidation) of heavy oil, catalytic decomposition of natural gas, coal gasification, and steam-iron coal gasification. [20][21][22][23][24][25] When released into the atmosphere, the conventional methods generate CO 2 as a by-product, assisting global warming. The generation of renewable hydrogen makes it more economical and environmentally benign. Electrolysis uses electrical power supplied from renewables to produce hydrogen and oxygen. Biomass routes Hydrogen, a nonpolluting gas, is emerging as an ideal, suitable, and economical energy carrier. The current global non-carbon hydrogen production is 105.8 MW in 2020 and is expected to reach 218 MW in 2021. Hydrogen possesses low ignition energy of 0.017 mJ and reacts exothermically with air, posing severe safety challenges. Humanly undetectable gas needs accurate and sensitive sensors to prevent accidents. Amongst different hydrogen sensors currently developed, work function-based sensors are sensitive, selective, costeffective, smaller in size, less susceptible to environmental change, an...

show abstract

Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

Cited by 31 publications

References 22 publications

Characterization of an Acetone Detector Based on a Suspended WO₃-Gate AlGaN/GaN HEMT Integrated With Microheater

Characterization of an Acetone Detector Based on a Suspended WO₃-Gate AlGaN/GaN HEMT Integrated With Microheater

Characterization of bulk GaN rectifiers for hydrogen gas sensing

Work Function‐Based Metal–Oxide–Semiconductor Hydrogen Sensor and Its Functionality: A Review

Contact Info

Product

Resources

About

Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

Cited by 31 publications

References 22 publications

Characterization of an Acetone Detector Based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated With Microheater

Characterization of an Acetone Detector Based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated With Microheater

Characterization of bulk GaN rectifiers for hydrogen gas sensing

Work Function‐Based Metal–Oxide–Semiconductor Hydrogen Sensor and Its Functionality: A Review

Contact Info

Product

Resources

About

Characterization of an Acetone Detector Based on a Suspended WO₃-Gate AlGaN/GaN HEMT Integrated With Microheater

Characterization of an Acetone Detector Based on a Suspended WO₃-Gate AlGaN/GaN HEMT Integrated With Microheater