Oxide-Based Materials and Devices 2010
DOI: 10.1117/12.846018
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Hydrogen in ZnO

Abstract: The results of a combined study of Raman scattering, IR absorption, photoluminescence, and photoconductivity on ZnO are presented. Two shallow donors-hydrogen at the bond-centered lattice site, H BC , and hydrogen bound in an oxygen vacancy, H O ,-were identified. Donor H BC has an ionization energy of 53 meV. The recombination of an exciton bound to H BC gives rise to the 3360.1 ± 0.2 meV photoluminescence line. The 1s → 2p donor transition at 330 cm −1 is detected in the Raman scattering and photoconductivit… Show more

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Cited by 2 publications
(1 citation statement)
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“…The amounts of these impurity atoms were measured by means of infrared spectroscopy, , and the amount of vacancies was measured by means of positron lifetime spectroscopy . With the exception of hydrogen, the purity with respect to the remaining elements of the periodic table was assumed to be acceptable on the basis of literature data concerning the elemental characterization of silicon materials produced by the semiconductor industry. It was recognized, however, that experimental evidence to support this assumption would endorse the claimed 2.0 × 10 –8 N A standard uncertainty.…”
Section: Determination Of the Impuritiesmentioning
confidence: 99%
“…The amounts of these impurity atoms were measured by means of infrared spectroscopy, , and the amount of vacancies was measured by means of positron lifetime spectroscopy . With the exception of hydrogen, the purity with respect to the remaining elements of the periodic table was assumed to be acceptable on the basis of literature data concerning the elemental characterization of silicon materials produced by the semiconductor industry. It was recognized, however, that experimental evidence to support this assumption would endorse the claimed 2.0 × 10 –8 N A standard uncertainty.…”
Section: Determination Of the Impuritiesmentioning
confidence: 99%