Hydrogen in Ge
            <sup>1)</sup>

Weber, J.

doi:10.1002/9783527650200.ch2

Cited by 2 publications

(6 citation statements)

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“…Post-growth hydrogen passivation can further enhance the RT PL properties of GIB-QDs [37]. Weber et al have shown [153][154][155][156] that DBs in Ge exhibit different electronic properties as compared to DBs in Si. In Ge, the DBs create states below the VB edge that are negatively charged.…”

Section: Fabrication Procedures Of Gib-qds and Deqdsmentioning

confidence: 99%

“…In Ge, the DBs create states below the VB edge that are negatively charged. Thus, interstitial hydrogen cannot efficiently passivate DB defects and electrons will not be localized at DB sites [153][154][155][156]. Therefore, optically active GIB-defects are not negatively affected by hydrogen passivation.…”

Section: Fabrication Procedures Of Gib-qds and Deqdsmentioning

confidence: 99%

“…Thus, it is very clear that ongoing studies will have to shed light on this new field of research. While there were plenty of studies conducted on defects in Si and Ge [155,156,[192][193][194][195][196][197][198][199][200][201][202][203][204][205][206][207][208][209][210], most of them deal with defects in bulk materials. We have shown in section 3.2 and figure 9 that only in QDs both, electrons and holes are efficiently confined.…”

Section: Further Development Of Deqdsmentioning

confidence: 99%

“…Such a radiation environment produces displacement damage in QDs where first the incident particles displace atoms, and the resulting defects give rise to new energy levels which, in turn, alter the material and electrical and optical device properties [155,156,192,193]. Some of the known defects in bulk Si and Ge include E-centers which consist of a vacancy and group-V atom and also provide deep donor levels below the CB edge [194][195][196][197].…”

Section: Further Development Of Deqdsmentioning

confidence: 99%

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Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications

Brehm

Grydlik

2017

Nanotechnology

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In this review, we report on fabrication paths, challenges, and emerging solutions to integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing standard Si technology. Their potential as laser gain material for the use of optical intra- and inter-chip interconnects as well as possibilities to combine a single-photon-source-based quantum cryptographic means with Si technology will be discussed. We propose that the mandatory addressability of the light emitters can be achieved by a combination of organized QD growth assisted by templated self-assembly, and advanced inter-QD defect engineering to boost the optical emissivity of group-IV QDs at room-temperature. Those two main parts, the site-controlled growth and the light emission enhancement in QDs through the introduction of single defects build the main body of the review. This leads us to a roadmap for the necessary further development of this emerging field of CMOS-compatible group-IV QD light emitters for on-chip applications.

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Section: Fabrication Procedures Of Gib-qds and Deqdsmentioning

confidence: 99%

Section: Fabrication Procedures Of Gib-qds and Deqdsmentioning

confidence: 99%

Section: Further Development Of Deqdsmentioning

confidence: 99%

Section: Further Development Of Deqdsmentioning

confidence: 99%

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Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications

Brehm

Grydlik

2017

Nanotechnology

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“…The effects of hydrogen incorporation into silicon [7][8][9], germanium [10,[11][12][13], and other widely-used semiconductors [14] have been studied extensively. Weber [11,12] reviewed the properties of hydrogen in germanium, many of which are similar to hydrogen in silicon, although noteworthy differences have been identified.…”

Section: Introductionmentioning

confidence: 99%

Enhanced optical and electrical performance of Ge_1−xSn _x /Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H₂ plasma treatments

Wang

Hogsed

Harris

et al. 2019

Semicond. Sci. Technol.

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The structural, electrical and optical properties of a unintentionally doped Ge 1−x Sn x (x=6.2%) alloy semiconductor both as-grown and after a hydrogen plasma treatment or 'hydrogen passivation' are investigated by high resolution x-ray diffraction, atomic force microscopy, and temperature-dependent Hall-effect and photoluminescence (PL) measurements. The samples were grown via reactions of SnD 4 and Ge 3 H 8 on Ge buffered Si wafers at 305 °C and subsequently subjected to a hydrogen plasma environment generated using an inductively coupled H 2 approach (ICP). The plasma treatments showed no appreciable change in the structural, compositional and morphological properties of the samples indicating no measurable degradation of the materials quality has occurred. However, the H passivation significantly alters the electrical activity of as-grown defects and impurities in the epilayer, resulting in electrical conductivity of passivated sample that is more than 2 times higher at 300 K and 30 times higher at 10 K. The as-grown samples showed conduction-type changes with temperature (manifested by singularities in the apparent carrier concentrations around 14 and 255 K), while the background n-type carrier concentration of the hydrogen treated analogs varied smoothly with temperature. In particular at 300 K, the carrier concentration was reduced from the background 4.61×10 17 cm −3 in the as-grown material to 5.68×10 16 cm −3 in the H treated counterpart due to potential passivation of deleterious point defects, a highly desirable outcome for effective device performance. The room temperature PL intensity increased ∼5 times (more than 3 times at 5 K) upon hydrogen treatment due to electrical passivation of deep acceptor states. Hydrogen plasma treatments are thus found to enhance the electrical and optical responses of the samples, suggesting that conventional ICP treatments could be used as a processing step to improve the properties of newly developed Sn-based group IV semiconductors using straightforward and relatively low temperature protocols.

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Hydrogen in Ge ¹⁾

Cited by 2 publications

References 103 publications

Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications

Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications

Enhanced optical and electrical performance of Ge_1−xSn _x /Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H₂ plasma treatments

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Hydrogen in Ge 1)

Cited by 2 publications

References 103 publications

Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications

Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications

Enhanced optical and electrical performance of Ge1−x Sn x /Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments

Contact Info

Product

Resources

About

Hydrogen in Ge ¹⁾

Enhanced optical and electrical performance of Ge_1−xSn _x /Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H₂ plasma treatments