Hydrogen gas sensing properties of MoS2/Si heterojunction

Liu, Yunjie; Hao, Lanzhong; Gao, Wei; Wu, Zhipeng; Lin, Ya‐Li; Li, Guixia; Guo, Wenyue; Yu, Lianqing; Zeng, Hongxin; Zhu, Jing; Zhang, Wanli

doi:10.1016/j.snb.2015.01.129

Cited by 103 publications

(45 citation statements)

References 34 publications

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“…Firstly, the excellent properties of MoS 2 , such as gas sensing and photoelectrical properties, could be integrated onto Si semiconductors and the fabrication of multifunctional devices would be realized. 11 Secondly, novel electrical characteristics can be caused by the incorporation of the junction area near the interface. 12 Based on the above analysis, MoS 2 thin films were grown on p-type Si substrates using magnetron sputtering technique and the n-MoS 2 /p-Si heterojunctions were fabricated in this study.…”

Section: Introductionmentioning

confidence: 99%

Growth and humidity-dependent electrical properties of bulk-like MoS₂ thin films on Si

et al. 2015

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Bulk-like molybdenum disulfide (MoS2) thin films were deposited on Si substrates using dc magnetron sputtering technique and n-MoS2/p-Si junctions were fabricated at room temperature (RT) and 400 °C, respectively. The typical oscillating modes of E 1 2g and A1g were shown in the Raman spectra of the as-grown MoS2 films. Atomic force microscopy illustrated that the surfaces of the films were composed of dense nanoscale grains and scanning electron microscopy revealed the existence of large quantities of pores in the surface. The current-voltage curves of the junctions showed obvious rectifying characteristics due to the energy-band bending near the interface of MoS2/Si. The fabricated junctions exhibited humidity-dependent electrical properties. Compared with the one with the MoS2 film deposited at RT, the junction fabricated at 400 °C showed much more obvious sensing properties to humidity gas. Especially, the sensitivity of the device could be tuned by external electrical fields. In the forward voltage range, the currents increased significantly after the junction was exposed to humidity conditions. The response increased with increasing voltage and reached the saturated value after V=1.9 V. The sensing performance was featured by a high sensitivity, fast response and recovery. The junction current in reverse voltage range decreased under the humidity condition. This was contrary to that in forward voltage range. We also studied the dependence of the sensing response on humidity levels. An almost linear correlation was obtained in the measured range of humidity levels. The sensing mechanisms of the MoS2/Si heterojunction were proposed.

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Section: Introductionmentioning

confidence: 99%

Growth and humidity-dependent electrical properties of bulk-like MoS₂ thin films on Si

et al. 2015

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“…Figure 1e I I I and [H 2 ] in a semilog scale, using a fixed V SD = 1 V and V G = −10 V for 0.5%, 5%, 20%, 25%, and 50% of [H 2 ]. [20,22] The minimal T RES is found to be ≈7 min under 50% of H 2 (see Figure S1 in the Supporting Information), while the T REC is around 67 min for the same concentration. In Figure 1f we show the I SD versus time curve.…”

Section: Resultsmentioning

confidence: 97%

“…[12,13] In fact, MoS 2 transistors have been used to monitor gases such as O 2 , [14] NO, [15] NH 3 , [16,17] NO 2 , [16][17][18] and, in general, sensors based on few layers MoS 2 FETs exhibit advantages comparing with bulk sensors such as transparency, cost-effectiveness for massive production, and high sensitivity. [22] Recently, Agrawal et al [23] have shown a promising H 2 detection system using edgeoriented vertically aligned MoS 2 flakes in a 3D array without any doping, suggesting that bare MoS 2 has the potential for H 2 detection. Some works propose the H 2 detection mechanism that holds only for more complex structures like MoS 2 nanocomposites films doped with palladium (Pd), [20] platinum (Pt), [21] or heterojunctions of MoS 2 films and silicon.…”

Section: Introductionmentioning

confidence: 99%

Probing the Electronic Properties of Monolayer MoS₂ via Interaction with Molecular Hydrogen

Rezende

Cadore

Gadelha

et al. 2018

Adv Elect Materials

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This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H2) and monolayer MoS2 field effect transistors (MoS2 FET), aiming for sensing application. The MoS2 FET exhibits a response to H2 that covers a broad range of concentration (0.1–90%) at a relatively low operating temperature range (300–473 K). Most important, H2 sensors based on MoS2 FETs show desirable properties such as full reversibility and absence of catalytic metal dopants (Pt or Pd). The experimental results indicate that the conductivity of MoS2 monotonically increases as a function of the H2 concentration due to a reversible charge transferring process. It is proposed that such process involves dissociative H2 adsorption driven by interaction with sulfur vacancies in the MoS2 surface (VS). This description is in agreement with related density functional theory studies about H2 adsorption on MoS2. Finally, measurements on partially defect‐passivated MoS2 FETs using atomic layer deposited aluminum oxide consist of an experimental indication that the VS plays an important role in the H2 interaction with the MoS2. These findings provide insights for future applications in catalytic process between monolayer MoS2 and H2 and also introduce MoS2 FETs as promising H2 sensors.

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“…Heterojunctions have their own importance for applications such as chemical sensing. Liu et al fabricated MoS 2 /Si heterojunction for H 2 detection by growing MoS 2 thin film on Si (p‐type, (100)) by DC magnetron sputtering 261. Hydrogen gas concentration of as low as 0.5% was also detectable with the device.…”

Section: Efforts To Improve Performance Of Devices Based On These Matmentioning

confidence: 99%

Recent Progress in Chemiresistive Gas Sensing Technology Based on Molybdenum and Tungsten Chalcogenide Nanostructures

Jha

Bhat

2020

Adv Materials Inter

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bonding of transition metal and chalcogen atom and their crystal structure. Interestingly, all these compounds exist as layered material except tungsten oxide (WO 3 ) whose hydrated crystal (WO 3 .H 2 O) is layered in nature. [2,3] Each of these chalcogenides possesses unique features. Several micro and nanostructures of these chalcogenides have been synthesized in literature for various applications including gas sensors, biosensors, batteries, supercapacitor, photoelectrochemical and electrochromic devices. However, this review article will focus on gas sensing applications of these materials.Gas sensors play a crucial role in our life as they find applications ranging from monitoring indoor air quality to detecting highly toxic gases. Two important components of a gas sensing device are receptor and transducer. The receptor enables the chemical interaction with the target analyte molecule, which is further converted into analytical signal by the transducer. There are several transduction techniques available in gas sensing based on the physical or chemical change being measured. Broadly, they can be classified into six different classes based on sensing principles which is listed in Table 1.Chemiresistive devices have several advantages over other existing techniques. For example, the structure of these types of devices is very simple and it can be integrated with the current complementary metal oxide semiconductor (CMOS) technology. Even though, several advances have been made over last few years to improve sensing performance, the search for reliable and repeatable gas sensing element is an ongoing endeavor with lots of expectation from tungsten and molybdenum chalcogenides.After the rise of graphene, other layered materials have emerged as important functional materials for various applications of highest scientific values. Among these, layered transition metal dichalcogenides (TMDs) have a special presence as they cover whole class of materials, i.e., ranging from pure insulators to true metals. W and Mo chalcogenides are mostly semiconducting in ambient conditions and therefore, suitable for electronic application such as chemiresistive gas sensors. Though, layered TMDs (MX 2 M = Mo, and W and X = S, Se, and Te) have evolved expeditiously in a very short time, we simply cannot ignore metal oxide (particularly Mo-and W-based Chalcogens are oxygen family elements with oxygen having distinct properties than the other group members like sulfur, selenium, and tellurium. Tungsten and molybdenum chalcogenides that include mainly metal oxides (MO 3 ; M = Mo, and W) and metal dichalcogenides (MX 2 ; X = S, Se, and Te) are the most exciting class of inorganic materials. They have been widely investigated in various applications including lithium and sodium ion storage, supercapacitors, gas sensors, biosensors etc. due to their fascinating surface properties and ease of fabrication. Different class of nanostructures including 0D (nanoparticles, quantum dots), 1D (nanowires, nanotubes, nanoribbons, nanobelts etc.), a...

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Hydrogen gas sensing properties of MoS2/Si heterojunction

Cited by 103 publications

References 34 publications

Growth and humidity-dependent electrical properties of bulk-like MoS₂ thin films on Si

Growth and humidity-dependent electrical properties of bulk-like MoS₂ thin films on Si

Probing the Electronic Properties of Monolayer MoS₂ via Interaction with Molecular Hydrogen

Recent Progress in Chemiresistive Gas Sensing Technology Based on Molybdenum and Tungsten Chalcogenide Nanostructures

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Hydrogen gas sensing properties of MoS2/Si heterojunction

Cited by 103 publications

References 34 publications

Growth and humidity-dependent electrical properties of bulk-like MoS2 thin films on Si

Growth and humidity-dependent electrical properties of bulk-like MoS2 thin films on Si

Probing the Electronic Properties of Monolayer MoS2 via Interaction with Molecular Hydrogen

Recent Progress in Chemiresistive Gas Sensing Technology Based on Molybdenum and Tungsten Chalcogenide Nanostructures

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Growth and humidity-dependent electrical properties of bulk-like MoS₂ thin films on Si

Growth and humidity-dependent electrical properties of bulk-like MoS₂ thin films on Si

Probing the Electronic Properties of Monolayer MoS₂ via Interaction with Molecular Hydrogen