Hydrogen-free synthesis of graphene–graphitic films directly on Si substrate by plasma enhanced chemical vapor deposition

Chen, Shumin; Gao, Ming; Cao, Runan; Du, Haiyan; Yang, Jie; Zhao, Lei; Ma, Zhongquan

doi:10.1007/s10854-014-2565-z

Cited by 9 publications

(7 citation statements)

References 30 publications

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“…As shown, the strongest peak at 284–285 eV is characteristic of C1s, indicating that the major ingredient of NGFs was carbon. The peak of O1s at 529–537 eV with weak intensity was attributed to absorbed oxygen from the atmosphere and the glass substrate [20]. The very tiny peaks of Si2p and Si2s at 96–102 eV and 146–155 eV were attribute to SiO 2 and its related compound from the glass substrate.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, low-temperature carbon film growth is attractive to reduce the costs and may enable the direct growth of carbon materials on flexible polymer-based substrates. However, the currently typical temperature required for chemical vapor deposition (CVD) growth of carbon-related materials is 800 °C–1000 °C [17,18,19,20], which is still too high. To address these problems, plasma-enhanced chemical vapor deposition (PECVD) was chosen for the preparation.…”

Section: Introductionmentioning

confidence: 99%

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Preparation, Characterization, and Performance Control of Nanographitic Films

et al. 2019

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Using methane as a carbon source, low-dimensional carbon nanomaterials were obtained in this work. The films were deposited directly on glass substrates by radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The configuration and compositions of this nanographite films were identified by X-ray photoelectron spectroscopy (XPS) as carbon in sp2 bonding form. Raman spectral characterization verified the configuration of the films to be hexatomic ring of carbon atoms. As a result, they were found to be nanographite films (NGFs). Also, the atomic force microscopy (AFM) topography and Raman spectra of different areas demonstrated the diversity of the films at the nano scale. The high light-transmitting and electron mobility indicated that the NGFs possessed excellent optic-electronic properties and could be used as good photoelectrical function materials. Furthermore, the physical and chemical growth mechanism of NGFs were analyzed by PECVD. NGFs could be obtained in a controlled process by modulating the growth conditions. In this work, the complicated transfer process commonly used for optoelectronic devices could be avoided. Also, by growing the films directly on a glass substrate, the quality degradation of the film was not a problem. This work can further promote the development of next-generation electronic or optoelectronic function materials, especially for their application in transparent conductive electrode fields.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Preparation, Characterization, and Performance Control of Nanographitic Films

et al. 2019

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“…Chemical vapor deposition (CVD) has emerged as an important method for the preparation and production of graphene since it was first reported in 2008, using Ni and Cu substrates [4],which was followed by an explosion of research activities and publications using a variety of transition metal substrates [17][18][19][20][21][22][23][24]. Among the various synthetic procedures of graphene, Plasma enhanced chemical vapor deposition (PECVD) is a very promising technique due to its peculiar advantages, such as fast growth rate, lower growth temperature, various substrate selection, and better crystallinity.…”

Section: Introductionmentioning

confidence: 99%

“…At first, silicon wafers, glass, copper, copper foil and nickel foil were washed with acetone, alcohol and deionized water three times in five containers respectively. Then, copper, copper foil and nickel foil were soaked in diluted hydrochloric separately, while silicon wafers were washed by RCA process [22]. At last, part of the washed silicon wafers, glass and polished silicon were covered in nickel film by vacuum evaporation.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen-free synthesis of few-layer graphene film on different substrates by plasma enhanced chemical vapor deposition

Chen

Gao

Zhao

et al. 2015

J Mater Sci: Mater Electron

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Few layer graphene were synthesized on different substrates by radio frequency plasma enhanced chemical vapor deposition in the absence of any catalyst under 300°C. Raman spectral characterization verified the bonding form of the films to be mostly sp 2 . The principal chemical mechanisms relevant to the growth of graphene from gaseous hydrogen and hydrocarbon species are presented. The kinetic processes during the activation and transport of the gaseous species are described. Furthermore, the effects of substrate treatment in the course of growth are analyzed. We demonstrated that the differences in growth conditions reveal different mechanisms of growth of graphene by chemical vapor deposition. Nevertheless, the overall thermodynamic and dynamics principles are identical. It is reasonable to obtain few layer graphene films by using methane alone without H 2 as source gas. Moreover, graphene films of various feature and structures for different purposes can be achieved controllably by modulating the kinetic factors. Also, these graphene films can be used in many photoelectric devices such as solar cells and photodetectors.

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“…During such complicated transfer procedures, the introduction of cracks or tears, and contamination of PMMA into graphene films are unavoidable. In this regard, to lower the reaction temperature and avoid the limitations of substrates, plasma-enhanced CVD (PECVD) has been widely used to synthesize transfer-free graphene films on different substrates including both metals and insulators [192][193][194][195][196][197][198][199].…”

Section: Resultsmentioning

confidence: 99%

Plasma based synthesis and surface modification of graphene.

Zhao¹

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Hydrogen-free synthesis of graphene–graphitic films directly on Si substrate by plasma enhanced chemical vapor deposition

Cited by 9 publications

References 30 publications

Preparation, Characterization, and Performance Control of Nanographitic Films

Preparation, Characterization, and Performance Control of Nanographitic Films

Hydrogen-free synthesis of few-layer graphene film on different substrates by plasma enhanced chemical vapor deposition

Plasma based synthesis and surface modification of graphene.

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