Hydrogen-enhanced clusterization of intrinsic defects and impurities in silicon

Mukashev, B.N.; Абдуллин, Х.А.; Gorelkinskii, Yu.V.; Tamendarov, M.F.; Tokmoldin, S. Zh.

doi:10.1016/s0921-4526(01)00437-9

Cited by 10 publications

(8 citation statements)

References 33 publications

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“…This activation energy is extremely close to the binding energy of the C-H 2 defect and the activation energy for the diffusion of H molecules from tetrahedral interstitial sites and multivacancy [10][11][12][13][14]. The C-H binding state in Si has also been reported in some previous studies [15][16][17][18]. However, previous papers have reported the analytical results of binding state and diffusion behaviour after heattreatment below 900 8C [19][20][21].…”

Section: Introductionsupporting

confidence: 79%

“…In our previous study, we performed epitaxial growth at approximately 1100 8C and found that H was trapped in the projection range of a C-cluster to 1100 8C after the subsequent heat-treatment. Therefore, the H binding state in the projection range of a C-cluster is presumed to differ from the C-H binding state reported conventionally [15][16][17][18]. Regarding the carbon behaviour in Si, Pinacho et al indicated that C and Si selfinterstitial (I) formed a C m I n (e.g., C 3 I 3 and C 3 I 2 ) cluster (CI cluster) in C-rich Si [22].…”

Section: Introductionmentioning

confidence: 93%

“…They reported the analytical results of the binding state and diffusion behaviour after heat-treatment below 800 8C. Other studies have reported the C-H binding state in Si bulk [15][16][17][18]. They also analysed the C-H binding state after lowtemperature heat-treatment below 900 8C.…”

Section: Introductionmentioning

confidence: 99%

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Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of carbon‐cluster implanted silicon epitaxial wafers for CMOS image sensors

Okuyama

Shigematsu

Hirose

et al. 2017

Phys. Status Solidi C

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The trapping and diffusion behaviour of hydrogen in projection range of carbon‐cluster was investigated by using a technology computer aided design (TCAD) simulation for high performance complementary metal–oxide–semiconductor (CMOS) image sensors. The hydrogen behaviour seemingly contributes to passivating the interface state density of the isolation region and process‐induced defects during the CMOS image sensor fabrication process. This hydrogen behaviour was simulated by a TCAD simulation assuming a reaction model in which the cluster of carbon and silicon self‐interstitial (carbon‐interstitial cluster) binds to hydrogen. We found that the hydrogen profiles of TCAD agreed with the secondary ion mass spectrometry (SIMS) results after epitaxial growth and high‐temperature heat‐treatment, thus suggesting that the hydrogen in the projection range of the carbon cluster forms a binding state with the carbon‐interstitial cluster. In addition, hydrogen gradually diffused out from the projection range of the carbon‐cluster after high‐temperature heat‐treatment. Therefore, the hydrogen behaviour in projection range of the carbon‐cluster is considered to contribute to the CMOS image sensor fabrication process to achieve high electrical performance.

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Section: Introductionsupporting

confidence: 79%

Section: Introductionmentioning

confidence: 93%

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Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of carbon‐cluster implanted silicon epitaxial wafers for CMOS image sensors

Okuyama

Shigematsu

Hirose

et al. 2017

Phys. Status Solidi C

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“…The presence of hydrogen changes the distributions of state density in both the valence and conduction bands, and the total hydrogen content ( C H ) affects the microstructure and internal mechanical stress accordingly . On the other hand, the electrical and structural properties of the a‐Si:H layers depend on the configurations of the Si–H bonds in the amorphous network , which are reflected by the presence of different vibrational modes. It has been revealed that hydrogen, depending on the deposition conditions, is generally incorporated in a‐Si:H layers in Si–H or Si–H 2 bonding configurations, or the mixtures of two.…”

Section: Introductionmentioning

confidence: 99%

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Guo

Zhang

Meng

et al. 2015

Physica Status Solidi (a)

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The properties of hydrogenated amorphous silicon (a-Si:H) thin layers were studied by spectroscopic ellipsometry (SE) and Fourier transform infrared spectroscopy (FTIR) measurements to determine their effects on the surface passivation of crystalline silicon (c-Si) in heterojunction solar cells. It was demonstrated that the high bulk quality of a-Si:H layers with denser structures was not sufficient for the passivation of c-Si surfaces in Silicon Heterojunction (SHJ) solar cells, in which the passivation performance is strongly governed by the total hydrogen content (C H ) as a-Si:H layers are ultra-thin. High effective carrier lifetime and implied open-circuit voltage (V oc,im ), as well as low surface recombination velocity, were obtained at the appropriate C H values, and the optimal windows of C H and of the hydrogen content in the Si-H 2 configuration (C 2 ) were determined to be 5.0 $ 8.5 and 2.9 $ 6.8 at.%, respectively. For C H values higher than 8.5 at.%, the passivation effect was degraded due to the deteriorated bulk properties of the a-Si:H layers. However, V oc,im decreased when C H was lower than 5.0 at.% because the number of H atoms was insufficient to saturate the dangling bonds at the a-Si: H/c-Si interface even though the a-Si:H layers had dense microstructures.

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“…Other analyses are implemented in a lesser extent (Raman scattering, deep level transient spectroscopy) [9,10]. FTIR spectroscopy has not been used so often though it offers some advantages.…”

Section: Introductionmentioning

confidence: 99%