Hydrogen effect on enhancement of defect reactions in semiconductors: example for silicon and vacancy defects

Nazarov, A. M.; Pinchuk, V. M.; Yanchuk, T. V.; Lysenko, V. S.; Vovk, Ya. N.; Rangan, S.; Ashok, S.; Kudoyarova, V. Kh.; Теруков, Е. И.

doi:10.1016/s0360-3199(00)00090-2

Cited by 9 publications

(2 citation statements)

References 14 publications

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“…Moreover, quantum mechanical calculations have shown that presence of atomic hydrogen near a vacancy in crystalline silicon leads to a decrease of mechanical stresses in the silicon lattice near the vacancy. 16 Hence it is possible that the hydrogen catalytically enables formation of silicide with fewer defects, thus increasing the mobility and thereby lowering the sheet resistance.…”

Section: Discussionmentioning

confidence: 99%

Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation

Vengurlekar

Balasubramanian

Ashok

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Nickel silicide (NiSi) offers the advantages of lower processing temperature, reduced silicon consumption in silicide formation, and absence of bridging failures and is hence expected to replace Ti and Co silicides as contact material in Si microelectronics. In this article, we report on our work involving the study of hydrogen plasma pretreatment of the Si substrate on the properties of subsequently formed NiSi. We observe the sheet resistance of the silicide film to decrease with hydrogenation at the expected lower processing temperatures of 400 and 500°C. Transmission electron microscopy studies do reveal that defects are introduced near the silicide-silicon interface in the hydrogenated wafers at lower processing temperatures. But these defects are annealed out at higher processing temperatures. Secondary ion mass spectroscopy profiles show an enhanced diffusion of Ni into the Si substrate at 500 and 600°C, apparently due to the defects introduced in the substrate by the hydrogen treatment.

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Section: Discussionmentioning

confidence: 99%

Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation

Vengurlekar

Balasubramanian

Ashok

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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show abstract

“…In this model, hydrogen plays the role of a catalyst of the defect reaction. In works [132][133][134][135], this model was supported by quantum-mechanical calculations and extended to the dopant activation process. The calculations have been performed on the basis of the SCF MO LCAO technique in the NDDO valence approach.…”

Section: A Model Of Enhanced Hydrogen Annealing Of Vacancy Defects Inmentioning

confidence: 99%

Untitled

2008

Semicond. phys. quantum electron. optoelectron.

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The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro-and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO 2-Si interface and SiO 2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing of vacancy defects and the implanted impurity activation in a subsurface implanted silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured light emitting materials.

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Role of vacancy defects on the dehydrogenation properties of the ternary hydride ZrNiH3: Ab-initio insights

Rkhis¹,

Anoua²,

Alaoui‐Belghiti³

et al. 2021

International Journal of Hydrogen Energy

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Hydrogen effect on enhancement of defect reactions in semiconductors: example for silicon and vacancy defects

Cited by 9 publications

References 14 publications

Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation

Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation

Untitled

Role of vacancy defects on the dehydrogenation properties of the ternary hydride ZrNiH3: Ab-initio insights

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