Hydrogen diffusivities below room temperature in silicon evaluated from the photoinduced dissociation of hydrogen–carbon complexes

Kamiura, Yoichi; Yoneta, Minoru; Hashimoto, Fumio

doi:10.1063/1.105772

Cited by 29 publications

(18 citation statements)

References 15 publications

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“…12 The diffusion coefficients can be classified into two groups, if temperature dependence is applied as a criterion. Above 200 K our data points are quite compatible with data reported by Seager, Anderson, and Brice, 7 Tavendale, Williams, and Pearton, 8 Kamiura, Yoneta, and Hashimoto, 9 and extrapolated from the high-temperature regime of vWW. 1 Below 200 K the temperature dependence of the diffusion coefficient, however, is drastically reduced, indicating a different transport mechanism.…”

Section: Resultssupporting

confidence: 91%

“…48͒ to be compared with the measured one of E a ϭ0.5 eV. 1,[7][8][9] It was recently also proposed for tunneling by Herrero. 13 Since it is not a straight path, it has to be ruled out for direct tunneling transitions because of the violation of momentum conservation.…”

Section: A High Temperature Regimementioning

confidence: 99%

“…3 Later experiments, however, at near room temperature again agree with the extrapolation of the vWW data. [7][8][9] Moreover, these experiments indicate that H has to be injected under carefully controlled conditions in order to avoid formation of the much less mobile molecule or even larger clusters and trapping by radiation damage.…”

Section: Introductionmentioning

confidence: 99%

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1Htunneling transport in crystalline Si of different doping

et al. 1998

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Section: Resultssupporting

confidence: 91%

Section: A High Temperature Regimementioning

confidence: 99%

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1Htunneling transport in crystalline Si of different doping

et al. 1998

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“…In this work the diffusion-related kinetics of H released from photo-induced dissociation of carbon-hydrogen complexes near the surface of the silicon (formed via wet-etching) was measured in the range T = 220-270 K, leading to a diffusivity D = (7 × 10 −2 cm 2 /s) exp(−0.54 eV/k B T ). This result was claimed to reflect a rate-limiting process involving the diffusion of hydrogen to phosphorous atoms [25].…”

Section: Introductionmentioning

confidence: 99%

Dynamics of Hydrogen in Silicon at Finite Temperatures from First Principles

Gomes

Markevich

Peaker

et al. 2022

Physica Status Solidi (b)

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Hydrogen defects in silicon still hold unsolved problems, whose disclosure is fundamental for future advances in Si technologies. Among the open issues is the mechanism for the condensation of atomic hydrogen into molecules in Si quenched from above T≈700 °C to room temperature. Based on first‐principles calculations, the thermodynamics of hydrogen monomers and dimers is investigated at finite temperatures within the harmonic approximation. Free energies of formation indicate that the population of normalH− cannot be neglected when compared to that of normalH+ at high temperatures. The results allow us to propose that molecular formation occurs during cooling processes, in the temperature window T≈700−500 K, above which the molecules collide with Si—Si bonds and dissociate, and below which the fraction of normalH− becomes negligible. The formation of normalH− and most notably of a fast‐diffusing neutral species can also provide an explanation for the apparent accelerated diffusivity of atomic hydrogen at elevated temperatures in comparison to the figures extrapolated from measurements carried out at cryogenic temperatures. Finally, it is shown that the observed diffusivity of molecules is better described upon the assumption that they are nearly free rotors, all along the migration path, including at the transition state.

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“…The large scatter in data for diffusion of hydrogen through silicon 148,[196][197][198][199][200][201][202][203][204][205][206][207][208][209][210][211][212][213][214] . We have only plotted data for hydrogen diffusion (no isotopes) and have indicated the type of silicon where known.…”

Section: Noble Gasesmentioning

confidence: 99%

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

Rushton

Aldous

Himsworth

2014

Review of Scientific Instruments

104

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Experiments using laser cooled atoms and ions show real promise for practical applications in quantumenhanced metrology, timing, navigation, and sensing as well as exotic roles in quantum computing, networking and simulation. The heart of many of these experiments has been translated to microfabricated platforms known as atom chips whose construction readily lend themselves to integration with larger systems and future mass production. To truly make the jump from laboratory demonstrations to practical, rugged devices, the complex surrounding infrastructure (including vacuum systems, optics, and lasers) also needs to be miniaturized and integrated. In this paper we explore the feasibility of applying this approach to the Magneto-Optical Trap; incorporating the vacuum system, atom source and optical geometry into a permanently sealed microlitre system capable of maintaining 10 −10 mbar for more than 1000 days of operation with passive pumping alone. We demonstrate such an engineering challenge is achievable using recent advances in semiconductor microfabrication techniques and materials.PACS numbers: 07.07.Df, 37.10.Gh, 07.30.Kf, I. ULTRACOLD QUANTUM TECHNOLOGYSince the first demonstrations of atoms and ions at sub-millikelvin temperatures in the mid-1980s, the field of atomic physics has been revolutionized by laser cooling and trapping as it provides researchers with a method to probe some of the purest and sensitive quantum systems available. This field is still highly productive and recently has put significant emphasis on the practical applications of this technology beyond the laboratory 1,2 . It was evident very early on that ultracold matter would be an indispensable tool in precise timing applications and a recent demonstration 3 has shown extremely low instabilities at the 10 −18 level. The wavelike nature of atoms as they are cooled to lower temperatures can be used to form atomic interferometers that outperform optical counterparts in measurements of accelerated reference frames 4-7 , which are important for inertial guidance systems, but can also provide sensitive measurements of mass, charge and magnetic fields [8][9][10][11] . Greater sensitivity beyond the classical limit is possible via squeezed 12 and entangled states 13-15 , which are also fundamental attributes for quantum computing 16,17 , and long distance quantum networking 18 . Ultracold matter has been used in the emerging field of quantum simulation 19 and is an indispensable tool in determining fundamental constants 20 , testing general relativity 21 and defining measurement standards 22 . Many researchers and industries believe such tools will be a major part of the 'second quantum revolution' in which the more 'exotic' properties of quantum physics are applied for practical applications 23,24 .The field of ultracold matter has reached a matua) m.d.himsworth@soton.ac.uk rity in both experimental methods and theoretical understanding allowing experiments to begin leaving the laboratory 25-27 . These systems are bespoke, rarely take up a ...

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Hydrogen diffusivities below room temperature in silicon evaluated from the photoinduced dissociation of hydrogen–carbon complexes

Cited by 29 publications

References 15 publications

1Htunneling transport in crystalline Si of different doping

1Htunneling transport in crystalline Si of different doping

Dynamics of Hydrogen in Silicon at Finite Temperatures from First Principles

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

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