Hydrogen complexes in hydrogenated silicon

Jackson, W. B.; Zhang, Shou-Cheng

doi:10.1016/0921-4526(91)90123-v

Cited by 23 publications

(12 citation statements)

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“…These are microcracks aligned predominantly along {1l1} crystallographic planes. The same H-induced microcracks are evidently in a-Si:H [51,52]. It is considered that Hz complex is a building block for these platelets in silicon network.…”

Section: Temperature Dependence Of Epr Lineshape During In Situ Measumentioning

confidence: 61%

“…This assumption allows us also to give the following explanation for the temperature dependence of EPR lineshape during in situ measurements. For sufficiently high sample temperatures (500-600 K) hydrogen migrates intensively in amorphous network via the formation and dissociation of defect-hydrogen complexes including metastable diatomic hydrogen complex [61,51,52,55,79,105] (see also Section 5.1). At moderate tem -p e r a t u r e s t h e d i f f u s i n g h y d r o g e n c a n g e n e r a t e e x t e n d e d s t r u c t u r a l d e f e c t s ( p l a t elets) that are hydrogen stabilized.…”

Section: Temperature Dependence Of Epr Lineshape During In Situ Measumentioning

confidence: 99%

“…Thus, when decreasing temperature from high values to moderate ones the platelet nucleation and growth occur from supersaturated solution of hydrogen in silicon. These platelets grow by the attachment of Hz "building blocks" [51,52]. As the platelets get larger, the lattice expands since the plane of H atoms exerts a force trying to expand the lattice [51].…”

Section: Temperature Dependence Of Epr Lineshape During In Situ Measumentioning

confidence: 99%

“…Nevertheless, aerosol particles differ noticeably from a-Si:H films. For example, the bonded hydrogen in a-Si:H films is mainly SiH groups embedded in amorphous silicon network in vacancies and hydrogen complexes [46][47][48][49][50][51][52][53][54][55]. As to particles, the high fraction of bonded hydrogen is localized on the surface of interconnected microvoids and microchannels [43,45].…”

Section: Introductionmentioning

confidence: 99%

“…The "clustered" SiH groups are, evidently, embedded in the amorphous network as hydrogen complexes (for example, H-induced platelets) [51,52,[66][67][68]. These SiH groups are inaccessible to the ambient gas [43][44][45].…”

Section: Introductionmentioning

confidence: 99%

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EPR investigation of a-Si:H aerosol particles formed under silane thermal decomposition

et al. 1998

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The dangling bond defects were investigated in a-Si:H particles formed under silane thermal decomposition in flow reactor. EPR together with hydrogen evolution method were used. The experimental results allowed us to conclude that there are two kinds of dangling bond defects in aSi:H aerosol particles. The defects of the first kind are localized on the surface of interconnected microvoids and microchannels (surface dangling bonds) and those of the second kind are embedded in amorphous silicon network (volume dangling bonds). The thermal equilibration of dangling bonds and temperature dependence of equilibrium dangling bond concentration were investigated. It was found that at temperatures >400 K the dangling bond concentration N reversibly depends on sample temperature. The volume dangling bond concentration increases with temperature increasing (the effective activation energy of dangling bond formation U> 0), and the surface dangling bond concentration decreases with temperature increasing (U < 0). It has been found that EPR line is considerably asymmetric for samples with high hydrogen content and for low hydrogen content the EPR line is weakly asymmetric. A conclusion was drawn that the asymmetry degree depends on amorphous silicon lattice distortions. This conclusion has been confirmed by EPR spectra simulations.

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Section: Temperature Dependence Of Epr Lineshape During In Situ Measumentioning

confidence: 61%