Hydrogen–boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

Fukata, Naoki; Fukuda, S.; Sato, Shôichi; Ishioka, Kunie; Kitajima, Masahiro; Hishita, Shunichi; Murakami, Kouichi

doi:10.1016/j.physb.2005.12.023

Cited by 6 publications

(3 citation statements)

References 14 publications

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“…A similar behavior of hydrogen and boron concentrations is observed after hydrogen treatment of layers implanted with boron [9,15]. However, when a large number of hydrogen atoms are introduced into a silicon substrate due to plasma treatment, the hydrogen concentration exceeds the concentration of boron atoms [9,15]. On the other hand, it follows from the experimental data that a distinct 'plateau' usually is not formed in phosphorus-doped silicon [9,12,13,16].…”

Section: Modelsupporting

confidence: 57%

“…The hydrogen concentration in the 'plateau' region is approximately equal to the boron concentration [6][7][8][9][11][12][13][14]. A similar behavior of hydrogen and boron concentrations is observed after hydrogen treatment of layers implanted with boron [9,15]. However, when a large number of hydrogen atoms are introduced into a silicon substrate due to plasma treatment, the hydrogen concentration exceeds the concentration of boron atoms [9,15].…”

Section: Modelmentioning

confidence: 62%

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Simulation of hydrogen diffusion and boron passivation in crystalline silicon

Velichko¹,

Shaman²,

Kovaliova³

2014

Modelling Simul. Mater. Sci. Eng.

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The model of hydrogen migration and of the reactions of hydrogen atoms with electrically active impurity, developed earlier, has been applied to simulate hydrogen diffusion and passivation process during plasma deuteration of silicon substrates doped with boron. The calculated deuterium concentration profiles agree well in the length of the passivated region with the experimental data obtained on treatment in hydrogen plasma at a temperature of 200 • C for 5, 10, and 15 minutes. On the other hand, to achieve a good fit to the abruptness of the calculated profiles between the passivated and unpassivated regions, it is necessary to suppose that the values of the parameters that describe the absorption of hydrogen interstitials by electrically active dopant atoms decrease with increase in the depth of the passivated region. For example, nonuniform spatial distributions of nonequilibrium point defects generated during plasma treatment can lead to a spatial dependence of hydrogen absorption.

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Section: Modelsupporting

confidence: 57%

Section: Modelmentioning

confidence: 62%

Simulation of hydrogen diffusion and boron passivation in crystalline silicon

Velichko¹,

Shaman²,

Kovaliova³

2014

Modelling Simul. Mater. Sci. Eng.

View full text Add to dashboard Cite

show abstract

“…It was reported that the transformation of the defect from an active to a passive state is a thermally activated process, whereas the recombination activity strongly increases with doping concentration [4]. Boron acceptors are passivated due to the formation of B-H complexes, where hydrogen is directly bonded to B in Si [47]. The reduction of surface states upon annealing can be explained by the saturation of dangling bonds by hydrogen [48,49], which removes surface states from the gap and replaces them by adsorbate-induced states influencing the surface band bending [50,51].…”

Section: Effect Of Wet Chemical Treatment On A-si Passivation Of Boromentioning

confidence: 99%