Hydrogen at semiconductor grain boundaries and interfaces

Aucouturier, Marc

doi:10.1016/0921-4526(91)90161-7

Cited by 9 publications

(2 citation statements)

References 26 publications

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“…The important role of hydrogen in a variety of technological processes employed for fabrication of semiconductor devices is well known. RF plasma hydrogenation leads to a considerable decrease in the concentration of electrically active traps in polycrystalline Si films [1], and hydrogen annealing of Si-SiO 2 -structures is a widely used technique for production of structures with a low interface state density [2]. Some processes resulting in thermal instability and the radiation-induced increase in the density of interface states in metal-SiO 2 -Si structures are associated with fast diffusing particles, including hydrogen atoms [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

Boutry‐Forveille¹

1998

Semicond. Phys. Quantum Electron. Optoelectron.

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SIMS measurements and thermal effusion experiments were performed to study the distribution and thermal stability of deuterium in SOI structures fabricated by zone melting recrystallization technique. It was found that the disordered structure at the silicon-buried oxide interfaces is directly related to the distribution of deuterium in the SOI system. The diffusion coefficient of deuterium in the top silicon layer at 250 o C was determined. For the first time, the high-temperature (up to 600 o C) stability of deuterium in the buried oxide was demonstrated, without any diffision into silicon layers.

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Section: Introductionmentioning

confidence: 99%

SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

Boutry‐Forveille¹

1998

Semicond. Phys. Quantum Electron. Optoelectron.

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“…The post-deposition hydrogenation of poly-Si films has been shown to improve their optoelectronic properties [2]. In addition, oxygen, which can easily penetrate in the polycrystalline structure through the GB when samples are exposed to air, could play an important role in the performance of poly-Si based devices.…”

Section: Introductionmentioning

confidence: 99%

Study of post-deposition contamination in low-temperature deposited polysilicon films

Bertomeu

Puigdollers

Peiró

et al. 1996

Materials Science and Engineering: B

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The presence of hydrogen in polysilicon films obtained at low temperatures by hot-wire CVD and the post-deposition oxidation by air-exposure of the films are studied in this paper.The experimental results from several characterization techniques (infrared spectroscopy, X-ray photoelectron spectroscopy, secondary ion mass spectrometry and wavelength dispersive spectroscopy) showed that hydrogen and oxygen are homogeneously distributed at grain boundaries throughout the depth of the films. Hydrogen is introduced during the growth process and its concentration is higher in samples deposited at lower temperatures. Oxygen diffuses along the grain boundaries and binds to Si atoms, mainly in Si 2 O groups.

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Extended Defects in Semiconductors and Their Interactions with Point Defects and Impurities

Pizzini¹

2015

Physical Chemistry of Semiconductor Materials and Processes

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Hydrogen at semiconductor grain boundaries and interfaces

Cited by 9 publications

References 26 publications

SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

Study of post-deposition contamination in low-temperature deposited polysilicon films

Extended Defects in Semiconductors and Their Interactions with Point Defects and Impurities

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