Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy

Temperature influence on the growth of gallium nitride by HVPE in a mixed H2/N2 carrier gas

“…One of the major difficulties is the occurrence of premature parasitic nucleation on the reactor walls upstream or in the deposition zone, which dramatically limits the possibility of obtaining reproducible results. In previous paper, we have demonstrated the existence of various growth mechanisms after the synthesis of systematic experimental studies of the growth of GaN as a function of physical parameters and thermodynamical and kinetic modelling [11][12][13]. A phenomenological model [14] has been developed which takes into account the two desorption mechanisms involved in the growth of {0 0 1} GaAs [15] and the experimental results published by Seifert et al [16] for the growth of (00.1) GaN.…”

Method for HVPE growth of thick crack-free GaN layers

“…As a start, the parameters during HVPE growth-like reactor design, carrier gasses and precursors are very important in obtaining good quality layers [7][8][9][10][11][12]. However, after these aspects have been optimized still many things can be varied.…”

Computed Growth Rates of (001) GaN Substrates in the Hydride Vapour Phase Method

“…The kinetic curves show also that a constant value of the growth rate as a function of 1/T can come from a high supersaturation value and not from a mass transfer limited process. The research of the zero point of relative superaturation performed by Aujol et al [8,9] has shown the possible effect of an incomplete GaCl 3 formation in N 2 atmosphere. The zero point reached at relative supersaturation values as low as --0.8 in N 2 /H 2 mixture seems to be related to a third deposition reaction [9].…”