Hydrogen adsorption states at the Pd/SiO2 interface and simulation of the response of a Pd metal–oxide–semiconductor hydrogen sensor

Eriksson, Mats; Ekedahl, Lars-Gunnar

doi:10.1063/1.367150

Cited by 59 publications

(34 citation statements)

References 12 publications

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“…However, second order effects such as tunneling transport and the initial ohmic region may cause R/R 0 to deviate from linearity. In addition, because of the finite number of interface states for H + ions [27], the sensor response saturates for H 2 concentrations exceeding a few percent [26].…”

Section: Sensing Principlementioning

confidence: 99%

Palladium/silicon nanowire Schottky barrier-based hydrogen sensors

Skucha

Fan

Jeon

et al. 2010

Sensors and Actuators B: Chemical

132

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a b s t r a c tThis work presents the design, fabrication, and characterization of a hydrogen sensor based on a palladium/nanowire Schottky barrier field-effect transistor that operates at room temperature. The fabricated sensor consists of boron-doped silicon nanowire arrays that are contact printed on top of a SiO 2 /Si substrate with subsequently evaporated Pd contacts. The fabrication process is compatible with post-CMOS and plastic substrate integration as it can be completed at temperatures below 150• C with good yield and repeatability. The sensor can reliably and reversibly detect H 2 concentrations in the range from 3 ppm to 5% and has a sensitivity of 6.9%/ppm at 1000 ppm. A response distinguishable from drift and noise is produced in less than 5 s for H 2 concentrations over 1000 ppm and less than 30 s for concentrations over 100 ppm. The sensor settles to 90% of the final signal value in about 1 h at lower concentrations and less than 1 min at 10,000 ppm H 2 . Drift over an 87-h measurement period is below 5 ppm H 2 concentration.

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Section: Sensing Principlementioning

confidence: 99%

Palladium/silicon nanowire Schottky barrier-based hydrogen sensors

Skucha

Fan

Jeon

et al. 2010

Sensors and Actuators B: Chemical

132

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“…This hydrogen induced shift was first observed for Si-based Pd:MOS-structures [27], and later for metal / insulator / silicon carbide (MISiC) diodes [28] with Pt Schottky contacts. It was explained by the formation of a dipole layer of atomic hydrogen, dissociated at the catalytic Schottky contact and adsorbed at the metal/SiO 2 interface [29,30] The hydrogen induced decrease of the barrier height in Pt:GaN diodes can be already observed at room temperature. However, the recovery times can be very long, typically several hours, as illustrated in Fig.…”

Section: Chemical Sensors For Gas Detectionmentioning

confidence: 96%

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications

Eickhoff

Schalwig²,

Steinhoff

et al. 2003

phys. stat. sol. (c)

134

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In the present article recent results concerning sensor applications of AlGaN layers and AlGaN/GaN heterostructures are summarized. The piezoresistive effect in piezoelectric AlGaN layers is investigated and the dependence of the piezoresistive gauge factor on the Al content is attributed to the influence of strain induced piezoelectric fields. An enhancement of this effect is observed in AlGaN/GaN heterostructures, resulting in high longitudinal gauge factors.The response of gas sensitive Pt:GaN Schottky diodes to hydrogen and hydrogen containing gases is analyzed up to temperatures of 600°C and employed to realize gas sensitive field effect transistors which are demonstrated to operate up to 400°C. In addition, ion sensitive field effect transistors (ISFETs) have also been fabricated on the basis of AlGaN/GaN heterostructures. The GaN surface shows a high pH sensitivity which is attributed to the presence of a thin native metal oxide layer on the surface.

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“…strongly impede hydrogen absorption [2,3]. Sensors [4] and hydrogen switchable mirrors [5] use Pd as a catalytic caplayer, and usually Pt is used for hydrogen dissociation in fuel cell electrodes [6]. But in general, we do not know why [7].…”

Section: Introductionmentioning

confidence: 98%