Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region*

Abstract

Hydrodynamic calculations of the chaotic behaviors in n+nn+ In0.53Ga0.47As devices biased in terahertz (THz) electric field have been carried out. Their different transport characteristics have been carefully investigated by tuning the n-region parameters and the applied ac radiation. The oscillatory mode is found to transit between synchronization and chaos, as verified by the first return map. The transitions result from the mixture of the dc induced oscillation and the one driven by the ac radiation. Our findings will give further and thorough understanding of electron transport in In0.53Ga0.47As terahertz oscillator, which is a promising solid-state THz source.

Advanced Micron Sized Gunn Diode Based on Graded-Gap GaPAs – GaInAs

“…The actual research was carried out by means of a three-level model of the intervalley electron transfer effect in graded-gap semiconductors based on the solution of the Boltzmann equation for the case of a displaced Maxwellian distribution of electrons [7][8][9]. This model represents a system of equations consisting of continuity equations, current density equations and energy balance equations for each of the three nonequivalent valleys of the semiconductor conduction band, as well as the Poisson equation [7].…”