Hydrazine-based deposition route for device-quality CIGS films

Mitzi, David B.; Yuan, Min; Liu, Wei; Kellock, A. J.; Chey, S. Jay; Gignac, Lynne; Schrott, A. G.

doi:10.1016/j.tsf.2008.10.079

Cited by 138 publications

(143 citation statements)

References 20 publications

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“…16a) were fabricated. [68][69][70] While earlier reported 0.45-cm 2 -area devices had efficiencies of as high as 10.3% for CIGS absorber layers with final heat treatment at 525 8C and x % 0.3, [68] external quantum efficiencies of as high as 12% have more recently been achieved. A solution-processed device with 12.1% efficiency (Fig.…”

Section: Reviewmentioning

confidence: 97%

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Solution Processing of Chalcogenide Semiconductors via Dimensional Reduction

Mitzi¹

2009

Advanced Materials

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216

192

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The quest to develop thin‐film solution processing approaches that offer low‐cost and preferably low‐temperature deposition, while simultaneously providing quality semiconductor characteristics, has become an important thrust within the materials community. While inorganic compounds offer the potential for outstanding electronic properties relative to organic systems, the very nature of these materials rendering them good electronic materials—namely strong covalent bonding—also leads to poor solubility. This review presents a “dimensional reduction” approach to improving the solubility of metal chalcogenide semiconductors, which generally involves breaking the extended framework up into discrete metal chalcogenide anions separated by small and volatile cationic species. The resulting soluble precursor may be solution‐processed into thin‐film form and thermally decomposed to yield the desired semiconductor. Several applications of this principle to the solution deposition of high‐performance active layers for transistors (channel mobility >10 cm2 V−1 s−1), solar cells (power conversion efficiency of as high as 12%), and fundamental materials study will be presented using hydrazine as the deposition solvent.

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Section: Reviewmentioning

confidence: 97%

“…17). [69] The best ''as-prepared'' device (dashed-line) in one , 560 mV, 0.64 and 8.1%, respectively. The electrical characteristics of all four devices on the 1 in.…”

Section: Reviewmentioning

confidence: 99%

Solution Processing of Chalcogenide Semiconductors via Dimensional Reduction

Mitzi¹

2009

Advanced Materials

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216

192

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“…[7,8] Here we show a non-vacuum, slurry-based coating method that combines advantages of both solution processing [10][11][12][13] and particlebased deposition, [14][15][16][17] enabling fabrication of Cu 2 ZnSn(Se,S) 4 devices with over 9.6% efficiency-a factor of five performance improvement relative to previous attempts to use highthroughput ink-based approaches [16][17][18] and >40% higher than previous record devices prepared using vacuum-based methods. [7] …”

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confidence: 99%

High‐Efficiency Solar Cell with Earth‐Abundant Liquid‐Processed Absorber

Todorov¹,

Reuter²,

Mitzi³

2010

Advanced Materials

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759

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Chalcogenide-based solar cells provide a critical pathway to cost parity between photovoltaic (PV) and conventional energy sources. Currently, only Cu(In,Ga)(S,Se) 2 (CIGS) and CdTe technologies have reached commercial module production with stable power conversion efficiencies of over 9 percent. [1,2] Despite the promise of these technologies, restrictions on heavy metal usage for Cd and limitations in supply for In and Te are projected to restrict the production capacity of the existing chalcogen-based technologies to <100 GWp per year, a small fraction of our growing energy needs, which are expected to double to 27 TW by 2050.[3-5] Earth-abundant copper-zinc-tin-chalcogenide kesterites, Cu 2 ZnSnS 4 and Cu 2 ZnSnSe 4 , have been examined as potential alternatives for the two leading technologies, [6][7][8][9] reaching promising but not yet marketable efficiencies of 6.7% and 3.2%, respectively, by multilayer vacuum deposition. [7,8] Here we show a non-vacuum, slurry-based coating method that combines advantages of both solution processing [10][11][12][13] and particlebased deposition, [14][15][16][17] enabling fabrication of Cu 2 ZnSn(Se,S) 4 devices with over 9.6% efficiency-a factor of five performance improvement relative to previous attempts to use highthroughput ink-based approaches [16][17][18] and >40% higher than previous record devices prepared using vacuum-based methods. [7]

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“…Este procesado se basa a la síntesis del compuesto fotovoltaico en forma de polvo, seguido por la dispersión del material en un medio adecuado y su posterior deposición a través de técnicas como dip-coating, spin coating [52,53] o Doctor Blade [54]. Finalmente, se emplea un tratamiento térmico bajo atmosfera controlada, donde se completa la reacción química de formación y la cristalización del material de interés (en esta etapa también se crea interfase Mo-Se y se introduce Na en la estructura que favorecen las propiedades eléctricas del dispositivo final).…”

Section: Síntesis De Cigs Y Su Posterior Cristalizaciónunclassified

“…Para la deposición de capas absorbentes en dispositivos solares de tipo CIGS a través de rutas químicas, la técnica utilizada más común es la deposición por spin-coating [31,52,53] El recubrimiento por spin-coating es un procedimiento usado para depositar capas delgadas uniformes sobre sustratos planos. Consiste en que una pequeña cantidad de material de recubrimiento es aplicado sobre el centro del sustrato, el cual se encuentra inmóvil o girando a baja velocidad.…”

Section: Ruta Solvotermalunclassified

Obtención de estructuras calcopirita (CIGS) y kesterita (CZTS) como absorbentes para dispositivos fotovoltaicos de capa fina mediante métodos de síntesis de bajo coste

Valls¹

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Hydrazine-based deposition route for device-quality CIGS films

Cited by 138 publications

References 20 publications

Solution Processing of Chalcogenide Semiconductors via Dimensional Reduction

Solution Processing of Chalcogenide Semiconductors via Dimensional Reduction

High‐Efficiency Solar Cell with Earth‐Abundant Liquid‐Processed Absorber

Obtención de estructuras calcopirita (CIGS) y kesterita (CZTS) como absorbentes para dispositivos fotovoltaicos de capa fina mediante métodos de síntesis de bajo coste

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