SnO2 has gained wide attention because of
its low synthesis
temperature (approximately 150 °C), high electron mobility, and
low manufacturing cost. However, the lattice mismatch at the SnO2/CsPbIBr2 interface and the oxygen vacancy leads
to nonradiative recombination. Therefore, the key to improving the
performance is to remove the defects between the SnO2 and
the CsPbIBr2. In this paper, the first-principles calculation
and experimental results show that the doping of LiF can enhance the
conductivity of SnO2 films and improve the energy band
alignment at the SnO2/CsPbIBr2 interface, which
enhances interfacial carrier transport. Furthermore, the doping of
LiF can adjust the lattice constants of the SnO2 films
and decrease the lattice mismatch between SnO2 and CsPbIBr2. The results showed that the LiF-modified SnO2 used at the optimum concentration had the best power conversion
efficiency (PCE) based on SnO2:LiF/perovskite of 6.58%,
which is nearly 34.83% higher than that of the pure CsPbIBr2 perovskite solar cells (PSCs). This work provides an insightful
strategy to improve the stability and efficiency of carbon-based all-inorganic
CsPbIBr2 PSCs.