Hybrid silicon–organic nanoparticle memory device

Kolliopoulou, S.; Dimitrakis, P.; Normand, P.; Zhang, Hao‐Li; Cant, N.; Evans, Stephen D.; Paul, Shashi; Pearson, Christopher; Molloy, A.; Petty, Michael C.; Tsoukalas, D.

doi:10.1063/1.1604962

Cited by 105 publications

(73 citation statements)

References 23 publications

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“…Polymer memory devices may be able to fulfil the criteria highlighted in the aforementioned papers, and so far there have been demonstrations of devices based on metal nanocluster layers by Ma et al (2003), Bozano et al (2004) and Tondelier et al (2004). The use of gold nanoparticles (encapsulated in organic ligands) in hybrid organic/inorganic memory devices has been demonstrated by Paul et al (2003) and Kolliopoulou et al (2003). Möller et al (2003) showed that the combination of organic materials and silicon diodes can be used to produce a write-once read-many-times (WORM) memory device.…”

Section: Introductionmentioning

confidence: 99%

Electrical bistability in a composite of polymer and barium titanate nanoparticles

Salaoru

Paul

2009

Phil. Trans. R. Soc. A.

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Growth in the use of organic materials in the fabrication of electronic devices is on the rise. Recently, some attempts have been undertaken to manufacture polymer memory devices. Such devices are fabricated by depositing a blend (an admixture of organic polymer, small organic molecules and nanoparticles) between two metal electrodes. These devices show two electrical conductivity states ('high' and 'low') when a voltage is applied, thus rendering the structures suitable for data retention. In this paper, we describe an attempt to fabricate memory devices using ferroelectric nanoparticles embedded in an organic polymer. This paper also discusses issues related to the observed memory effect.

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Section: Introductionmentioning

confidence: 99%

Electrical bistability in a composite of polymer and barium titanate nanoparticles

Salaoru

Paul

2009

Phil. Trans. R. Soc. A.

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“…Most of the fabrication processes described in the MOS capacitor-structure memory devices can be utilized in the synthesis of charge trapping layers composed of gold nanoparticles. Kolliopoulou et al reported on the use of silicon-oninsulator (SOI) wafers as the substrates and surface modified colloidal gold nanoparticles adsorbed on the APTES-coated tunnelling oxide layers [50]. After the fabrication of source-drain junctions and gateelectrode definition, MOSFET-structure memory devices were fabricated.…”

Section: Mos Field-effect Transistor-type Memory Devicesmentioning

confidence: 99%

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily synthesized, and have a high work function. Various synthesis methods have been applied to fabricate gold nanoparticle-based nonvolatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory applications. In this article, the recent advances in fabrication and characterization of gold nanoparticle-based nonvolatile memory devices, with an emphasis on flash memory-type memory devices, are reviewed. Detailed device fabrication, characterization, and future directions are reported based on the recent research activities and literature.

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“…Inorganic species used in these memories include semiconductor nanoparticles (ZnO, CdSe, Si, CuO and so on) and metal nanoparticles (Au, Ag, FeNi and so on). [22][23][24][25][26][27][28] Both insulating polymers, such as polyimide (PI), poly(methylmethacrylate) and polystyrene, and conducting polymers, such as poly(Nvinylcarbazole) and poly(2-methoxy-5-(2-ethyhexoxy)-1,4-phenylene …”

Section: Device Structure and Fabrication Of The Nonvolatile Memory Dmentioning

confidence: 99%

Electrical memory devices based on inorganic/organic nanocomposites

Kim

Yang²,

et al. 2012

NPG Asia Mater

168

110

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Nonvolatile memory devices based on hybrid inorganic/organic nanocomposites have emerged as excellent candidates for promising applications in next-generation electronic and optoelectronic devices. Among the various types of nonvolatile memory devices, organic bistable devices fabricated utilizing hybrid organic/inorganic nanocomposites have currently been receiving broad attention because of their excellent performance with high-mechanical flexibility, simple fabrication and low cost. The prospect of potential applications of nonvolatile memory devices fabricated utilizing hybrid nanocomposites has led to substantial research and development efforts to form various kinds of nanocomposites by using various methods. Generally, hybrid inorganic/organic nanocomposites are composed of organic layers containing metal nanoparticles, semiconductor quantum dots (QDs), core-shell semiconductor QDs, fullerenes, carbon nanotubes, graphene molecules or graphene oxides (GOs). This review article describes investigations of and developments in nonvolatile memory devices based on hybrid inorganic/organic nanocomposites over the past 5 years. The device structure, fabrication and electrical characteristics of nonvolatile memory devices are discussed, and the switching and carrier transport mechanisms in the hybrid nonvolatile memory devices are reviewed. Furthermore, various flexible memory devices fabricated utilizing hybrid nanocomposites are described and their future prospects are discussed.

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Hybrid silicon–organic nanoparticle memory device

Cited by 105 publications

References 23 publications

Electrical bistability in a composite of polymer and barium titanate nanoparticles

Electrical bistability in a composite of polymer and barium titanate nanoparticles

Recent progress in gold nanoparticle-based non-volatile memory devices

Electrical memory devices based on inorganic/organic nanocomposites

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