Hybrid silicon nanocrystal silicon nitride dynamic random access memory

Steimle, R.F.; Sadd, M.; Muralidhar, R.; Rao, R. A.; Hradsky, B.; Straub, S.; White, Bruce

doi:10.1109/tnano.2003.820817

Cited by 29 publications

(20 citation statements)

References 2 publications

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“…Recently it started to attract attention both as a host embedding material for nanocrystals 10,11,12 and also for optical waveguide applications 2 . The α-and β-Si 3 N 4 have hexagonal conventional cells with four and two molecules, respectively.…”

Section: Si3n4 and Ge3n4mentioning

confidence: 99%

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Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Sevik

Bulutay

2007

J Mater Sci

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An extensive theoretical study is performed for wide bandgap crystalline oxides and nitrides, namely, SiO2, GeO2, Al 2O3, Si3N4, and Ge3N 4. Their important polymorphs are considered which are for SiO 2: α-quartz, α- and β-cristobalite and stishovite, for GeO2: α-quartz, and rutile, for Al2O 3: α-phase, for Si3N4 and Ge 3N4: α- and β-phases. This work constitutes a comprehensive account of both electronic structure and the elastic properties of these important insulating oxides and nitrides obtained with high accuracy based on density functional theory within the local density approximation. Two different norm-conserving ab initio pseudopotentials have been tested which agree in all respects with the only exception arising for the elastic properties of rutile GeO2. The agreement with experimental values, when available, are seen to be highly satisfactory. The uniformity and the well convergence of this approach enables an unbiased assessment of important physical parameters within each material and among different insulating oxide and nitrides. The computed static electric susceptibilities are observed to display a strong correlation with their mass densities. There is a marked discrepancy between the considered oxides and nitrides with the latter having sudden increase of density of states away from the respective band edges. This is expected to give rise to excessive carrier scattering which can practically preclude bulk impact ionization process in Si3N4 and Ge3N4. © Springer Science+Business Media, LLC 2007

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Section: Si3n4 and Ge3n4mentioning

confidence: 99%

“…These nanocrystals are embedded in an insulating matrix which is usually chosen to be silica 4,5,6,7 . However, other wide bandgap materials are also employed such as germania 8,9 , silicon nitride 10,11,12 , and alumina 13,14,15 . As a matter of fact, the effect of different host matrices is an active research topic in this field.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Sevik

Bulutay

2007

J Mater Sci

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“…This technique has been performed widely for the fabrication of NVM device. 2) Considering the nature of the true thickness, epitaxial orientation relationships and morphology of each layer, one can examine the sample through tilting the orientation to an exact zone of silicon substrate from cross-sectional observation. The plane-view examination can provide the information of particle size, density and morphology as well.…”

Section: Introductionmentioning

confidence: 99%

Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device

Banerjee

Maikap

et al. 2011

Mater. Trans.

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The aim of this work is to investigate the particle size and morphology of the nanocrystals in the non-volatile memory device by annular dark field (ADF) scanning transmission electron microscopy (STEM) and conventional transmission electron microscopy (CTEM) techniques. With respect to TEM investigation, statistical analysis on STEM image can acquire the size and density of nanocrystals more accurately than on TEM image. In addition, ADF STEM images successfully provide powerful evidences revealing the structure of IrO x nanocrystals as a core shell structure, where the inner structure is rich in Ir and the outer area is abundant in O or Al. This method could be one of the efficient way for examining the nanocrystals with a complicated cored structure.

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“…The result indicates a superior tolerance against the conventional Flash memory, which typically allows not more than 10 5 programming/erasing cycles due to the tunneling oxide degradation by the hot carrier effect. A high endurance was also reported based on silicon-nitride/nc-Si memory structure recently [71]. …”

Section: Operation Speed and Device Reliabilitymentioning

confidence: 83%

“…Alternatively, to improve charge retention time with consuming programming/ erasing time, one may take advantages of trap-assisted charging/discharging that needs the thermal excitation process [71]. Horv ath fabricated a Si 3 N 4 /nc-Si/Si 3 N 4 capacitor memory, which gave rise to a huge memory window with charge storage in the upper Si 3 N 4 film.…”

Section: Characteristics Improvements Of the Nc-si Flash Memorymentioning

confidence: 99%