2015
DOI: 10.1364/oe.23.006878
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Hybrid Si-VO_2-Au optical modulator based on near-field plasmonic coupling

Abstract: We present a computational design for an integrated electro-optic modulator based on near-field plasmonic coupling between gold nanodisks and a thin film of vanadium dioxide on a silicon substrate. Active modulation is achieved by applying a time-varying electric field to initiate large changes in the refractive index of vanadium dioxide. Significant decrease in device footprint (200 nm x 560 nm) and increase in extinction ratio per unit length (9 dB/µm) compared to state-of-the-art photonic and plasmonic modu… Show more

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Cited by 61 publications
(30 citation statements)
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References 47 publications
(51 reference statements)
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“…In strongly-correlated materials, conventional forms of plasmons have been observed in the metallic or superconducting phases of these materials, and there have been studies to explore their potential for plasmonics in vanadium oxides678 and cuprates910. In particular, localized conventional surface plasmons have been observed in the metallic phase of V O 2 , and its temperature-dependent metal–insulator transition has been utilized for plasmonic switching and sensing678.…”
mentioning
confidence: 99%
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“…In strongly-correlated materials, conventional forms of plasmons have been observed in the metallic or superconducting phases of these materials, and there have been studies to explore their potential for plasmonics in vanadium oxides678 and cuprates910. In particular, localized conventional surface plasmons have been observed in the metallic phase of V O 2 , and its temperature-dependent metal–insulator transition has been utilized for plasmonic switching and sensing678.…”
mentioning
confidence: 99%
“…In particular, localized conventional surface plasmons have been observed in the metallic phase of V O 2 , and its temperature-dependent metal–insulator transition has been utilized for plasmonic switching and sensing678. However, in strongly-correlated, insulating phases of these materials (such as in Mott insulators11), correlated forms of plasmons under long-range Coulomb interactions have only been theoretically investigated12 but not experimentally observed.…”
mentioning
confidence: 99%
“…In order to utilize the phase transition without the slow thermal component, additional consideration to the underlying silicon structure needs to be given to improve the modulation depth. We have recently discussed one such possible strategy 48. …”
mentioning
confidence: 99%
“…The integration of photonics circuitry with metal architectures has paved the way for the control of SPP modes with electrical signals [5][6][7]. Recently, various kinds of fast response and small footprint plasmonic devices based on EO effect, such as ring resonators [8][9][10][11], detectors [12], phase shifters [13], field effect transistors (FETs) [14], gratings [15], and optical switches/modulators [16,17], have been demonstrated. Among these devices, waveguide ring resonators (WRRs) are more convenient to be fabricated extreme compact.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, the reliability of waveguide devices based on PLZT thin films is much better than the same type devices dependent on EO polymers and NLCs. In comparison with the EO modulators based on VO 2 [17,34] and doped silicon [35], the electro-optical control of PLZT waveguide devices can be accomplished through modulating the electric field directly, making the fabrication process and structure of total device much simpler. Hence, we believe an improvement of the performance of EO modulators can be obtained with the combination of PLZT thin films and plasmonic components.…”
Section: Introductionmentioning
confidence: 99%