2016
DOI: 10.1016/j.orgel.2016.08.015
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Hybrid photovoltaic structures based on amorphous silicon and P3HT:PCBM/PEDOT:PSS polymer semiconductors

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Cited by 9 publications
(13 citation statements)
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“…An interesting relative higher photo current than that for inorganic reference sample is found in the region of short wavelength from λ = 410 to 354 nm associated to the frontal interface of the structures. It suggests better electronic properties of organic-inorganic frontal interfaces due to lower surface back diffusion coefficient of carriers generated close to this interface or/and lower surface recombination rate and probably more stable chemical interface [28]. Some confirmation on quality of undoped absorber material can be obtained from subgap for hν < E opt photocurrent.…”
Section: Fabricationmentioning
confidence: 86%
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“…An interesting relative higher photo current than that for inorganic reference sample is found in the region of short wavelength from λ = 410 to 354 nm associated to the frontal interface of the structures. It suggests better electronic properties of organic-inorganic frontal interfaces due to lower surface back diffusion coefficient of carriers generated close to this interface or/and lower surface recombination rate and probably more stable chemical interface [28]. Some confirmation on quality of undoped absorber material can be obtained from subgap for hν < E opt photocurrent.…”
Section: Fabricationmentioning
confidence: 86%
“…In Figure 7, such hypothetical electron energetic diagrams in thermal equilibrium for H1, H2, and H3 structures are represented, more details about them can be found in Ref. [28]. In H1, energetic diagram (Figure 7a) shows that the light absorption occurs in the organic bulk heterojunction formed by P3HT and PCBM.…”
Section: On Electron Energetical Diagrams For Hybrid Device Structuresmentioning
confidence: 99%
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