Hybrid Permeable‐Base Transistors Based on an Indenofluorene Derivative

Hümmelgen, Ivo A.; Hadizad, Tayebeh; Wang, Zhi Yuan

doi:10.1002/smll.200500305

Cited by 18 publications

(17 citation statements)

References 6 publications

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“…Sn thin film grown on Si as intermediate electrode was previously reported [23] in the case of permeable-base transistors (PBTs), showing high permeability to the electric field. In PBTs the permeability of a metallic layer to the electric field can be directly inferred and quantified [24].…”

Section: Resultsmentioning

confidence: 99%

Copper phthalocyanine based vertical organic field effect transistor with naturally patterned tin intermediate grid electrode

Kvitschal

Cruz-Cruz

Hümmelgen

2015

Organic Electronics

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Section: Resultsmentioning

confidence: 99%

Copper phthalocyanine based vertical organic field effect transistor with naturally patterned tin intermediate grid electrode

Kvitschal

Cruz-Cruz

Hümmelgen

2015

Organic Electronics

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“…In the sequence Au was evaporated on top of the DPIF layer. Further details of the transistor preparation and device geometry are similar to those reported elsewhere [4]. The effective area of the devices is approximately 1 mm 2 .…”

Section: Methodsmentioning

confidence: 97%

“…A PBT containing indenofluorene derivative was reported to operate with positive charge carriers, having a nearly ideal common-base current gain [4]. In this work, we further studied the common-emitter mode characteristics of this device.…”

Section: Introductionmentioning

confidence: 98%

Hybrid Organic/Inorganic Transistors Utilizing an Indenofluorene Derivative as Emitter

Hümmelgen¹,

Hadizab

Wang

2007

ECS Trans.

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The molecular semiconductors are widely used on a great diversity of electronic and optoelectronic devices. The incorporation of molecular semiconductors to semiconductor-metal-semiconductor transistors (SMS) simplified the required production technology and, more importantly, allowed the construction of devices in vertical architecture with nearly ideal common-base current gains. In this work we present the results of the construction of SMS transistors utilizing an organic semiconductor, an indenofluorene derivative (DPIF), as emitter. The base and collector are respectively tin (Sn) and p-doped silicon (Si-p). The devices were electrically characterized at three-terminal measurements and were operated in common-base and commonemitter modes, revealing a permeable-base characteristic. The base thickness was varied in order to investigate the influence on the device performance. High current gain (~1) was obtained in common-base mode, and in common-emitter mode a current gain of 120 was achieved for a base thickness of 23 nm.

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“…Subsequently, it was recognized that a permeable metal base electrode is required to achieve transistor operation. The principle of these so‐called permeable metal‐base transistors (PMBTs) is based on charge carrier transmission from the emitter to the collector through the small pores or pinholes in the permeable metal base layer …”

Section: Averaged Common‐base Gain (α) and Common‐emitter Gain (β) Ofmentioning

confidence: 99%

“…The principle of these so-called permeable metal-base transistors (PMBTs) is based on charge carrier transmission from the emitter to the collector through the small pores or pinholes in the permeable metal base layer. [5][6][7][8] A typical PMBT has the following structure: emitter electrode/emitter/permeable metal-base/collector/collector electrode ( Figure 1 a). The challenge to fabricate inorganic PMBTs is that it requires expensive thin fi lm growth techniques such as molecular beam epitaxy.…”

mentioning

confidence: 99%