Hybrid Numerical-Analytical Effective Index Method for Designing Large Geometry Ridge Waveguides

Roy, Priyanka; Das, P.; Tallur, Siddharth

doi:10.1109/ipcon.2018.8527225

Cited by 3 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The single mode condition for the waveguide structure is essential for any integrated opto-electronic device to sustain the fundamental mode of propagation for strong optical confinement and efficient coupling with external optical fibers without intermode interference. A hybrid numerical-analytical design methodology for obtaining single mode condition in ridge waveguides with geometries larger than the wavelength of guided light has been presented in our previous work [29]. We design a ridge waveguide structure following our design methodology and perform finite difference time domain (FDTD) simulations in OptiFDTD 32-bit tool to validate the design.…”

Section: Simulation Setupmentioning

confidence: 99%

Design and analysis of high electron mobility transistor inspired: III-V electro-optic modulator topologies

Das

Tallur

2020

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

III-V heterostructure based high electron mobility transistors (HEMTs) offer superior performance as compared to CMOS silicon transistors owing to the high mobility in the 2D electron gas (2DEG) channel at the heterostructure interface. Gallium nitride (GaN) based HEMTs are also suitable for high power and high temperature applications. GaN has a rich offering of material properties spanning domains of non-linear optics, piezoelectric micro-electro-mechanical systems, and monolithic microwave integrated circuits. In this paper, we propose HEMT inspired III-V electro-optic modulator topologies and study the light interaction with 2DEG in such structures. We analyze the electroabsorption and electrorefraction on account of the 2DEG interaction with light and present a design framework to selectively leverage the desired mechanism of modulation. Our analysis suggests that modulation index of electrorefractive modulation in a HEMT-like structure is comparable to silicon photonic modulators. By leveraging the higher electron mobility in these material platforms, the device concepts proposed here could potentially be used to design electro-optic modulators with extremely high modulation rates.

show abstract

Section: Simulation Setupmentioning

confidence: 99%

Design and analysis of high electron mobility transistor inspired: III-V electro-optic modulator topologies

Das

Tallur

2020

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Knowing the parameters related to the active region and assuming the structure including the waveguide, one can calculate the parameters of the ridge waveguide. The AlN cover layer, with the index of refraction of 2.165 can be assumed to be effectively infinite because the evanescent waves will not penetrate very far into the layer [71]. The guiding layer or core is AlGaN/GaN/AlGaN layers.…”

Section: Resultsmentioning

confidence: 99%

Power improvement in ridge bent waveguide superluminescent light-emitting diodes based on GaN quantum dots

Rokhi¹,

Asgari²

2021

Phys. Scr.

View full text Add to dashboard Cite

In this paper, the performance of ridge-waveguide superluminescent light-emitting diodes (SLED) based on nitride quantum dots has been reported. For this purpose, the three-dimensional Schrodinger equation has been solved numerically by the finite volume method for truncated pyramidal quantum dots as active regions taking into account all spontaneous and piezoelectric effects. To calculate the modal gain in the active region, the traveling-wave rate equations model has been used. We solved the traveling-wave equations coupled with the carrier density rate equation to obtain the output power related to the bias current, numerically. The output power is one of the parameters that describe the performance of a superluminescent light-emitting diode. The output power is studied for the SLEDs with different waveguide structural parameters such as the cavity length and radius of curvature. The temperature-dependent of the SLED output power is also investigated. The maximum output power of the SLED increased up to 0.08 W for the cavity with the length of 1200 mm.

show abstract

“…Desta forma, é necessário controle adequado da deposição que deve ocorrer em curto período [12], conforme Figura 23, que mostra que maiores tempos de deposição conduzem a maiores perdas por propagação (sobretudo para os guias mais estreitos), com consequências no ganho, conforme será visto no item a seguir. A escolha desse simulador foi motivada pelos resultados de trabalhos desenvolvidos na área da Óptica Integrada [28][29][30] e a sua versão 32bits [31] ser gratuita para utilização.…”

Section: Plasmons De Superfície E a Influência Nas Propriedades óPtic...unclassified

Utilização da arquitetura pedestal para fabricação de guias de onda com ilhas de ouro visando desenvolvimento de dispositivos fotônicos que operem na região do infravermelho.

Delboni¹

View full text Add to dashboard Cite

This work aims to produce passive waveguides using a pedestal structure with TeO2 -ZnO (TZ) and GeO2 -PbO (GP) matrices, in order to test the guidance of light in the visible and near infrared regions. A new process was used to manufacture the waveguides that replaces the chromium mask by the use of the silicon dioxide (SiO2). The profile of the guides was analyzed by Scanning Electron Microscopy and the Atomic Force Microscopy technique was used to characterize the gold islands. Films were produced using the Sputtering technique and propagation loss measurements were made using the top view technique using 632 nm and 980 nm laser. The guides with GP core did not demonstrate guidance in the visible and therefore the influence of O2 on the deposition of this film was studied, but it did not influence satisfatorily the process. Guides with TZ core demonstrated guidance in the visible (632 nm) and near infrared (980 nm) regions. For the cases of guides produced with gold islands, nucleation was carried out through several thermal treatments following procedures previously established by the group. The presence of gold islands significantly reduced the propagation loss in the near infrared region (980 nm) for all guides (1-10 µm and 80 µm wide) with GP core. For the case of guides with TZ core, this reduction was more significant for the narrower guides (1-10 µm in width). Finally, the lowest loss obtained in the visible region was 2 dB/cm for the 80 µm width guide with TZ core without gold islands and in the near infrared region it was 2.08 dB/cm for the 80 µm width guide with GP core with gold islands. It is important to highlight that guides with GP core without gold islands, showed at 980 nm, loss of 3.31dB/cm, for 80 µm width guide. Simulations were performed to theoretically determine guided modes and compare them with experimental results. This new production process with a pedestal platform brings advantages, as it promotes a low surface roughness, eliminating the concern about the micromasking effect resulting from the use of the chrome mask and simplifies the process steps, allowing the use of conventional microelectronic techniques already consolidated (lithography, oxidation and corrosion) based on silicon technology for the construction of the pedestal, proving to be applicable in the construction of photonic devices.

show abstract

Hybrid Numerical-Analytical Effective Index Method for Designing Large Geometry Ridge Waveguides

Cited by 3 publications

References 5 publications

Design and analysis of high electron mobility transistor inspired: III-V electro-optic modulator topologies

Design and analysis of high electron mobility transistor inspired: III-V electro-optic modulator topologies

Power improvement in ridge bent waveguide superluminescent light-emitting diodes based on GaN quantum dots

Utilização da arquitetura pedestal para fabricação de guias de onda com ilhas de ouro visando desenvolvimento de dispositivos fotônicos que operem na região do infravermelho.

Contact Info

Product

Resources

About