Hybrid light-emitting diodes from anthracene-contained polymer and CdSe/ZnS core/shell quantum dots

Abstract

In this paper, we added CdSe/ZnS core/shell quantum dots (QDs) into anthracene-contained polymer. The photoluminescent (PL) characteristic of polymer/QD composite film could identify the energy transitions of anthracene-contained polymer and QDs. Furthermore, the electroluminescent (EL) characteristic of hybrid LED also identifies emission peaks of blue polymer and QDs. The maximum luminescence of the device is 970 cd/m2 with 9.1 wt.% QD hybrid emitter. The maximum luminous efficiency is 2.08 cd/A for the same device.

Cross-linked PEDOT: PSS as an alternative for low-cost solution-processed electronic devices

“…4(a), show that the device produced using ITO and gold as electrodes, with a 140 μm thick active layer and active area of 0.85 cm 2 , operates on both polarities, with turn-on voltages in the 30-36 V, which is significantly low, considering the film thickness (electric field of 2.6 × 10 5 V/m). These characteristics are quite similar to that published on a similar light-emitting device [8,[37][38][39][40][41][42][43]. The device luminance reached 2500 cd/m 2 and a luminous efficacy of 26 cd/A, as can be seen in Fig.…”

“…Usually devices produced with light-emitting composites comprising inorganic microparticles exhibit maximum luminance of 50 cd/ m 2 [37,38] and 100 cd/m 2 [8], and it is necessary a complex device structure to achieve numbers close to 10 3 cd/m 2 [39]. Devices with maximum luminance in the range 10 3 -10 4 cd/m 2 were already produced using ultrathin films of composites comprising nanoparticles [40][41][42][43]. Although the light intensity is fairly high on these devices, their luminous efficacy are very low, normally not higher than 10 cd/A.…”

Synthesis and characterization of nanostructured magnetoresistive Ni doped ZnO films

“…A negative change in the MR as the magnetic field increases indicates consistent alignment of the electron spin [30]. The MR behavior in Mn or Co doped ZnO shows positive and negative changes; in the case of Ni or Cu doped ZnO only negative changes are observed [30]. The MR behavior observed in the produced samples is consistent with the mentioned results, therefore the proposed method is useful to produce DMO films.…”

“…Gradual negative changes in the magnetoresistance of around 0.5% were observed at 300 K with similar behavior to the results reported in the literature [6,30]. The MR behavior as the magnetic field is increased depends on the spin alignment either of the d electrons of TM ions and conduction band electrons.…”

“…The MR behavior as the magnetic field is increased depends on the spin alignment either of the d electrons of TM ions and conduction band electrons. A negative change in the MR as the magnetic field increases indicates consistent alignment of the electron spin [30]. The MR behavior in Mn or Co doped ZnO shows positive and negative changes; in the case of Ni or Cu doped ZnO only negative changes are observed [30].…”