Hybrid-integrated diode laser in the visible spectral range

Franken, Cornelis A. A.; Rees, Albert van; Winkler, Lisa; Fan, Youwen; Geskus, Dimitri; Dekker, R.; Geuzebroek, Douwe; Fallnich, Carsten; Slot, Petrus J.M. van der; Boller, Klaus-J.

doi:10.1364/ol.433636

Cited by 39 publications

(15 citation statements)

References 28 publications

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“…Visible light is a spectral region that is attracting increasing interest in many applications, including data communications [1], microscopy [2], biosensing [3], nanomedicine [4,5], quantum optics [6,7], and virtual reality [8]. In this wavelength range, silicon nitride (Si 3 N 4 ) is one of the most established highindex-contrast platforms for photonic integrated circuits (PICs) because it offers a good trade-off between low propagation loss and high integration scale [9].…”

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confidence: 99%

Amorphous-silicon visible-light detector integrated on silicon nitride waveguides

et al. 2022

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Visible-light integrated photonics is emerging as a promising technology for the realization of optical devices for applications in sensing, quantum information and communications, imaging, and displays. Among the existing photonic platforms, high-index-contrast silicon nitride (Si3N4) waveguides offer broadband transparency in the visible spectral range and a high scale of integration. As the complexity of photonic integrated circuits (PICs) increases, on-chip detectors are required to monitor their working point for reconfiguration and stabilization operations. In this Letter, we present a semi-transparent in-line power monitor integrated on Si3N4 waveguides that operates in the red-light wavelength range (660 nm). The proposed device exploits the photoconductivity of a hydrogenated amorphous-silicon (a-Si:H) film that is evanescently coupled to an optical waveguide. Experimental results show a responsivity of 30 mA/W, a sensitivity of –45 dBm, and a sub-µs time response. These features enable the use of the proposed photoconductor for high-sensitivity monitoring and control of visible-light Si3N4 PICs.

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confidence: 99%

Amorphous-silicon visible-light detector integrated on silicon nitride waveguides

et al. 2022

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“…4e ). Note that integrating both III–V and SiN on the same substrate ensures a robust coupling between the gain and the external cavity over a broad temperature range, whereas other linewidth-narrowing methods, such as hybrid integration with chip-to-chip butt coupling 23 , 29 , 43 , face positional misalignment challenges due to thermal expansion mismatch between different elements.…”

Section: High-temperature Advantage Of Short-wavelength Picsmentioning

confidence: 99%

Extending the spectrum of fully integrated photonics to submicrometre wavelengths

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Zhang

Morin

et al. 2022

Nature

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Integrated photonics has profoundly affected a wide range of technologies underpinning modern society1–4. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency5,6. Over the last decade, the progression from pure III–V materials platforms to silicon photonics has significantly broadened the scope of integrated photonics, by combining integrated lasers with the high-volume, advanced fabrication capabilities of the commercial electronics industry7,8. Yet, despite remarkable manufacturing advantages, reliance on silicon-based waveguides currently limits the spectral window available to photonic integrated circuits (PICs). Here, we present a new generation of integrated photonics by directly uniting III–V materials with silicon nitride waveguides on Si wafers. Using this technology, we present a fully integrated PIC at photon energies greater than the bandgap of silicon, demonstrating essential photonic building blocks, including lasers, amplifiers, photodetectors, modulators and passives, all operating at submicrometre wavelengths. Using this platform, we achieve unprecedented coherence and tunability in an integrated laser at short wavelength. Furthermore, by making use of this higher photon energy, we demonstrate superb high-temperature performance and kHz-level fundamental linewidths at elevated temperatures. Given the many potential applications at short wavelengths, the success of this integration strategy unlocks a broad range of new integrated photonics applications.

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“…Tunable lasers with an ultra-stable frequency are central in many applications. Diode lasers, based on hybrid integration of a semiconductor optical amplifier with a long and low-loss Si 3 N 4 frequency-selective circuit, are well suited for both the infrared and visible spectral range [1]. In particular, using high-Q ring resonators for frequency-selective feedback has the advantage of generating ultra-narrow intrinsic linewidth, presently as low as 40 Hz [2].…”

Section: Introductionmentioning

confidence: 99%