2016
DOI: 10.1364/oe.24.016512
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Hybrid III–V/SOI resonant cavity enhanced photodetector

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Cited by 18 publications
(9 citation statements)
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“…4(a), the proposed structure consists of two DBRs as outer mirrors and a HG as a coupling mirror. The HG, which is composed of a Si grating layer and a cap layer made of III-V semiconductors, is a variant of HCG 16, 32, 33 . The reflection properties of HGs are similar to those of HCGs 16 .…”
Section: Resultsmentioning
confidence: 99%
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“…4(a), the proposed structure consists of two DBRs as outer mirrors and a HG as a coupling mirror. The HG, which is composed of a Si grating layer and a cap layer made of III-V semiconductors, is a variant of HCG 16, 32, 33 . The reflection properties of HGs are similar to those of HCGs 16 .…”
Section: Resultsmentioning
confidence: 99%
“…Finally, metal contacts are formed. The wafer-bonding can be feasibly done with a high yield in several ways, e.g., direct wafer-bonding as we did for hybrid Si-on-chip lasers and photodetectors 26, 31, 33 , or transfer-printing process 35, 36 . It is noted that the field strength within the cap layer can be very strong.…”
Section: Resultsmentioning
confidence: 99%
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“…In the FMM, which is also referred to as rigorous coupled wave analysis (RCWA), the eigenmodes are expanded using a Fourier basis. The FMM has been used widely for investigating gratings [23][24][25][26][27][28], since the Fourier basis is particularly suitable for periodic structures. Nonetheless, by introducing perfectly matched layers (PMLs) at the boundaries of simulation domains, the FMM has been successfully employed for studying various non-periodic structures such as dielectric waveguides [20,29,30], photonic crystals waveguides [31,32], finite gratings [33], microdisks [34,35], and vertical cavities [36,37].…”
Section: Numerical Solution: Fourier Modal Methodsmentioning
confidence: 99%
“…The direct epitaxial growth PDs is an optimal on-chip PD design, which has the highest optical coupling efficiency. However, most PDs are made of group III–V materials [ 7 , 8 , 9 , 10 ]. In addition, the lattice mismatch of group III–V and Si materials is relatively large, which is not conducive to the high-quality monolithic integration of photonic chips.…”
Section: Introductionmentioning
confidence: 99%