2016
DOI: 10.1016/j.cjph.2016.06.004
|View full text |Cite
|
Sign up to set email alerts
|

Hybrid flexible ambipolar thin-film transistors based on pentacene and ZnO capable of low-voltage operation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
5
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 8 publications
(5 citation statements)
references
References 22 publications
0
5
0
Order By: Relevance
“…Recently, research in thermal endurable substrates is gaining traction, and polymeric substrates that exhibit high thermal endurance have been reported. Highlighted in the literature are polyimide (PI), [ 171 ] heat stabilized polyether ether ketone (PEEK), [ 43,238 ] polyarylates (PAR), [ 239 ] polyethersulfone (PES), and liquid crystal polymers (LCP). [ 30 ]…”
Section: Enabling Technologies For Olaementioning
confidence: 99%
See 2 more Smart Citations
“…Recently, research in thermal endurable substrates is gaining traction, and polymeric substrates that exhibit high thermal endurance have been reported. Highlighted in the literature are polyimide (PI), [ 171 ] heat stabilized polyether ether ketone (PEEK), [ 43,238 ] polyarylates (PAR), [ 239 ] polyethersulfone (PES), and liquid crystal polymers (LCP). [ 30 ]…”
Section: Enabling Technologies For Olaementioning
confidence: 99%
“…PAR is a high performance and transparent thermoplastic material. [ 239 ] Yang et al. used it as a flexible substrate for a hybrid TFT device.…”
Section: Enabling Technologies For Olaementioning
confidence: 99%
See 1 more Smart Citation
“…19–23 Employing an n-type/p-type active bilayer is a feasible strategy to realize balanced transport of holes and electrons. 24–29 Recently, plenty of p-type organic semiconductors with high hole mobility have been reported. 30–35 Several research groups designed organic/inorganic double-layered active materials to fabricate ambipolar FETs, such as pentacene/ZnO, 24 C8-BTBT/IGZO, 9 C8-BTBT/ZTO 36 and DNTT/ZTO.…”
Section: Introductionmentioning
confidence: 99%
“…In view of the abovementioned issues, the adoption of highk dielectrics to replace traditional SiO 2 is considered an effec tive and important approach to lower the operating voltage and enhance the on/off ratio of the drain current in OTFTs [5,6]. Over the past few years, several inorganic gate di electrics, such as vapor and solution phase deposited metal oxides (Al 2 O 3 [7], ZrO 2 [8], HfO 2 [9] and TiO 2 [10]), have been investigated, and some of these highk OTFTs have demon strated lowvoltage operation below 5 V [2]. Among highk materials, zirconium oxide is an obvious ideal candidate for OTFT because it uniquely combines excellent thermal, chem ical and mechanical stability, as well as a theoretical highk value (25) [11,12].…”
Section: Introductionmentioning
confidence: 99%