Abstract:Typically, changes in the conductive properties of resistive random‐access memory elements happen due to the movement of ions in an ultra‐thin dielectric layer under the influence of an electric field. In the case of oxides, they often talk about the movement of oxygen vacancies and the formation/destruction of conducting filaments. Such processes are often described by dynamic systems in which the state parameter corresponds to the position of the boundary between regions with low and high concentrations of o… Show more
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