Humidity testing of SiC power MOSFETs

Sadik, Diane-Perle; Nee, Hans‐Peter; Giezendanner, Florian; Ranstad, Per

doi:10.1109/ipemc.2016.7512796

Cited by 10 publications

(9 citation statements)

References 20 publications

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“…The root causes of SF are temperature swings, humidity, average temperature level and temperature variations and, hence, very similar to those of BWLO. In terms of ALC, IGBTs are not sealed against humidity and their silicone gel is not impermeable to moisture [22]. Thus, especially in offshore WTs, an increase of humidity causes an increase of the electric field at the edge terminals of the IGBTs and leads to the corrosion of solder joints [23].…”

Section: Failure Mechanisms Of Igbt Modulesmentioning

confidence: 99%

“…In terms of ALC, IGBTs are not sealed against humidity and their silicone gel is not impermeable to moisture [22]. Thus, especially in offshore WTs, an increase of humidity causes an increase of the electric field at the edge terminals of the IGBTs and leads to the corrosion of solder joints [23]. Another destructive effect of moisture is the expansion of small cracks due to the surge of pressure inside the module during soldering [24].…”

Section: Failure Mechanisms Of Igbt Modulesmentioning

confidence: 99%

“…On the other hand, applying a higher voltage leads to thermal stresses in the module. ALC reduces the effective cross‐section and leads to an increase in electrical resistance [22]. Wang et al [64] have applied V CE,on as an indicator of ALC.…”

Section: Review Of Current Degradation Indicators Of Igbt Modulesmentioning

confidence: 99%

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Section: Failure Mechanisms Of Igbt Modulesmentioning

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“…However, it is greatly different between the simulation results and the actual operational results. Another is fault statistics or reliability studies based on field data usually focus on power devices [4][5]. However, this type of studies requires a large amount of long-term data collection and statistics, and it has a strong regional specificity.…”

Section: Introductionmentioning

confidence: 99%

“…In fact, it is hard to simulate all operational conditions because of the restricted laboratory conditions and the large number of operational conditions. The literature [4] has carried out an analysis to identify the relative humidity is one of the root causes and driving factors of faults in MOSFETs. However, the relative humidity is not considered into the operational reliability evaluation of photovoltaic (PV) inverters.…”

Section: Introductionmentioning

confidence: 99%

Operational reliability evaluation of PV inverter considering relative humidity and its application on power system

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With the penetration of renewable energy in the power system gradually increases, the importance of power electronics is growing up. The reliability of the power electronics should be taken seriously. This paper focuses on the operational reliability of photovoltaic (PV) inverters which is the most vulnerable in grid-connected PV systems and its application on the reliability evaluation of power systems. According to the field data, the effect of relative humidity is nonnegligible to the reliability of PV inverters. First, the real-time failure rate of components in PV inverters calculation method considering relative humidity is presented. Then the operational reliability evaluation of PV inverters is proposed. Finally, the reliability of power system including grid-connected PV systems is evaluated. It is aimed to explore a bottom-up approach to "effect factors-components-devices-system" reliability evaluation to establish a link between the components/devices and system. In this paper, the numerical examples verify the necessary of considering relative humidity in reliability evaluation. The evaluation results of PV inverters are used to the Roy Billinton Test System (RBTS). The analysis shows the results may affect the overall system performance.

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Field test of a silicon carbide metro propulsion system with reduced losses and acoustic noise

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Results are reported from a successful field test with a silicon carbide (SiC) metal‐oxide‐semiconductor field‐effect transistor (MOSFET) traction inverter. The train has been operated over a 3‐month period in the Stockholm metro system. Increased traction inverter power density has been achieved, with volume and weight reductions of 51% and 25%, respectively. Lower power losses permit the use of car motion cooling. A sound pressure level reduction of 9 dB(A) was measured in the field with the higher inverter switching frequency permitted by using SiC. Complementing tests have been performed in the laboratory to compare thermal performance of silicon and SiC in the same power semiconductor housing. Propulsion system power losses are reduced by 19% with SiC. Acoustic noise reductions while increasing switching frequency are also reported.

show abstract

Humidity testing of SiC power MOSFETs

Cited by 10 publications

References 20 publications

Increasing the reliability of wind turbines using condition monitoring of semiconductor devices: a review

Increasing the reliability of wind turbines using condition monitoring of semiconductor devices: a review

Operational reliability evaluation of PV inverter considering relative humidity and its application on power system

Field test of a silicon carbide metro propulsion system with reduced losses and acoustic noise

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