2022
DOI: 10.1021/acsomega.2c00479
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Human Exhalation CO2 Sensor Based on the PEI-PEG/ZnO/NUNCD/Si Heterojunction Electrode

Abstract: Gas sensors based on semiconductors have outstanding sensitivity compared with the oxide-based devices; however, the high operation temperature greatly hinders its development in practical applications. Chronic obstructive pulmonary disease (COPD) is one of the leading causes of death worldwide, and the patients with severe COPD with or without exacerbation tend to have airflow obstruction, which results in an increase of CO 2 concentration and subsequent hypercapnic respiratory failure.… Show more

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Cited by 6 publications
(5 citation statements)
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References 45 publications
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“…In the impedance measurements, the semicircle diameter indicates the electron transfer resistance ( R ct ) that controls the electron transfer kinetics of the redox probe at the electrode interface. The R ct values of NUNCD/Si, b-ZnO/NUNCD/Si, and FC/b-ZnO/NUNCD/Si are 238.1, 134.5, and 140.8 Ω, respectively (Nyquist plot not shown). The R ct was decreased when the b-ZnO was coated, indicating that the efficiency of electron transfer is improved, further verifying the capability of the heterojunction structure . However, the R ct increased slightly due to the poor conductivity nature of FC.…”
Section: Results and Discussionmentioning
confidence: 69%
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“…In the impedance measurements, the semicircle diameter indicates the electron transfer resistance ( R ct ) that controls the electron transfer kinetics of the redox probe at the electrode interface. The R ct values of NUNCD/Si, b-ZnO/NUNCD/Si, and FC/b-ZnO/NUNCD/Si are 238.1, 134.5, and 140.8 Ω, respectively (Nyquist plot not shown). The R ct was decreased when the b-ZnO was coated, indicating that the efficiency of electron transfer is improved, further verifying the capability of the heterojunction structure . However, the R ct increased slightly due to the poor conductivity nature of FC.…”
Section: Results and Discussionmentioning
confidence: 69%
“…This phenomenon is attributed to the junction of two semiconductor materials with different energy gaps, resulting in reconciliation at the interface. Thus, the onset energy of secondary electrons and the Fermi energy level were changed, which can improve the current density and sensitivity by reducing the work function . Therefore, the structure of FC/b-ZnO/NUNCD/Si was selected for further investigation.…”
Section: Results and Discussionmentioning
confidence: 99%
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