1996
DOI: 10.1063/1.115921
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Huge birefringence in selectively oxidized GaAs/AlAs optical waveguides

Abstract: Fiore, A.; Berger, V.; Rosencher, E.; Laurent, N.; Theilmann, S.; Vodjdani, N.; Nagle, J.

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Cited by 48 publications
(20 citation statements)
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“…As such, several waveguide structures have been developed so far by many groups in order to achieve it in AlGaAs waveguides. These include multilayer AlGaAs/Al 2 O 3 waveguides for artificial form birefringence phase matching (FBPM) [69,70], engineered-waveguides for modal phase matching (MPM) [71,72], Bragg reflection waveguides (BRW) for MPM [73], orientation patterned GaAs (OP-GaAs) for quasi-phase matching (QPM) via domain reversal [74], and periodically switching nonlinearity (PSN) via etch-and-regrowth for QPM [75]. A comprehensive discussion of these techniques may be found in Ref.…”
Section: Periodically Intermixed Waveguidesmentioning
confidence: 99%
“…As such, several waveguide structures have been developed so far by many groups in order to achieve it in AlGaAs waveguides. These include multilayer AlGaAs/Al 2 O 3 waveguides for artificial form birefringence phase matching (FBPM) [69,70], engineered-waveguides for modal phase matching (MPM) [71,72], Bragg reflection waveguides (BRW) for MPM [73], orientation patterned GaAs (OP-GaAs) for quasi-phase matching (QPM) via domain reversal [74], and periodically switching nonlinearity (PSN) via etch-and-regrowth for QPM [75]. A comprehensive discussion of these techniques may be found in Ref.…”
Section: Periodically Intermixed Waveguidesmentioning
confidence: 99%
“…Although quasi-phase matching was recently demonstrated in GaAs waveguides, 2 the high scattering losses limit the useful interaction length to about 1 mm. We recently proposed 3,4 to use the huge form birefringence in multilayer AlGaAs/͑Al oxide͒ waveguides to achieve phase matching. 5 These highindex contrast multilayers are obtained by selective lateral oxidation of AlGaAs/AlAs heterostructures.…”
Section: ͓S0003-6951͑97͒00951-0͔mentioning
confidence: 99%
“…Because the index difference between these two materials is so large, new optical devices can be fabricated which are not possible using conventional III-V epitaxy. For example, semiconductor waveguides containing Al 2 O 3 layers can have an extremely large polarization birefringence [11]. This birefringence has recently been exploited to phase match frequency mixing processes in co-propagating geometries [12].…”
Section: Introductionmentioning
confidence: 99%