Hug-like island growth of Ge on strained vicinal Si(111) surfaces

Persichetti, Luca; Menditto, R.; Sgarlata, A.; Fanfoni, M.; Balzarotti, A.

doi:10.1063/1.3655906

Cited by 6 publications

(1 citation statement)

References 16 publications

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“…In other words, the island acts as a trap for many clusters surrounding it. From the experimental side, previous investigations found a direct correlation between the minimum-strain energy path, as modeled by FE simulations, and the morphology of Ge islands grown on Si(111) substrates [18]. Here, scanning tunneling microscopy (STM) measurements were carried out in an ultrahigh vacuum chamber (p < 3×10 −11 Torr).…”

Section: Resultsmentioning

confidence: 98%

Size-dependent reversal of the elastic interaction energy between misfit nanostructures

Persichetti

Sgarlata²,

Fanfoni³

et al. 2013

J. Phys.: Condens. Matter

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By exploiting a fully three-dimensional finite-element modeling of strain fields, we investigate the spatial dependence of the elastic interaction energy between misfitting nanostructures beyond the point-dipole approximation. When interacting islands are finite in size, the detailed shape of the elastic strain field around and under the islands may convert the repulsive interactions, usually experienced between equal-sized islands, into an attractive basin between a large island and a population of neighboring clusters smaller than a critical size. The results of the simulations applied to large Ge islands grown on a Si(111) substrate have significant implications for the understanding of the strain-mediated coarsening of quantum dots around the islands.

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Section: Resultsmentioning

confidence: 98%