How to measure diffusional decoherence in multimode rubidium vapor memories?

Chrapkiewicz, Radosław; Wasilewski, Wojciech; Radzewicz, Czesław

doi:10.1016/j.optcom.2013.12.020

Cited by 16 publications

(20 citation statements)

References 36 publications

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“…Firstly, the results of this paper agree with the results we obtained using the same cells [18] but a completely different method. Secondly, the former methods relied on measuring the relaxation of the atomic spin alignments, a function of gas pressure to retrieve both the diffusion coefficient and the spin-exchange rates [15].…”

Section: Resultssupporting

confidence: 90%

“…In particular, we note that krypton and xenon appear to be very good buffer gases for modern quantum applications; yet, they have scarcely been used so far. Apart from us, only one group has utilized krypton [26], while xenon has been used only by us [18].…”

Section: Discussionmentioning

confidence: 99%

“…[18]. Given the recent applications of hyperpolarized 129 Xe in medical imaging, we hope that the precise value of this diffusion coefficient will help optimize setups like the one presented in Ref.…”

Section: Discussionmentioning

confidence: 99%

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Direct observation of atomic diffusion in warm rubidium ensembles

Parniak

Wasilewski

2013

Appl. Phys. B

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We present a robust method for measuring diffusion coefficients of warm atoms in buffer gases. Using optical pumping, we manipulate the atomic spin in a thin cylinder inside the cell. Then, we observe the spatial spread of optically pumped atoms in time using a camera, which allows us to determine the diffusion coefficient. As an example, we demonstrate measurements of diffusion coefficients of rubidium in neon, krypton and xenon acting as buffer gases. We have determined the normalized (273 K, 760 Torr) diffusion coefficients to be 0.18 ± 0.03 cm 2 /s for neon, 0.07 ± 0.01 cm 2 /s for krypton and 0.052 ± 0.006 cm 2 /s for xenon.

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Section: Resultssupporting

confidence: 90%

Section: Discussionmentioning

confidence: 99%

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Direct observation of atomic diffusion in warm rubidium ensembles

Parniak

Wasilewski

2013

Appl. Phys. B

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“…The anti-diagonal width 2w avg represents a span of angles θ x (AS) where the anti-Stokes light is detected. It decreases during the storage due to diffusion of atoms in the buffer gas [30,39] which in turn washes out dense fringes in the stored spin-hologram coupling to higher angles of scattering [33].…”

mentioning

confidence: 99%

“…Here coincidences distribution n coinc (θ between photons stored and retrieved from the holographic memory. A visible decay of high-scattering-angle events is determined by a diffusional decoherence [39]. (b) A doubled squared ratio between anti-diagonal and diagonal width of coincidence histograms is used to estimate the total number of retrieved angular modes M < 60 F versus the storage time in agreement with diffusion model [33].…”

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confidence: 99%

High-Capacity Angularly Multiplexed Holographic Memory Operating at the Single-Photon Level

2017

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We experimentally demonstrate an angularly-multiplexed holographic memory capable of intrinsic generation, storage and retrieval of multiple photons, based on off-resonant Raman interaction in warm rubidium-87 vapors. The memory capacity of up to 60 independent atomic spin-wave modes is evidenced by analyzing angular distributions of coincidences between Stokes and time-delayed anti-Stokes light, observed down to the level of single spin-wave excitation during several-µs memory lifetime. We also propose how to practically enhance rates of single and multiple photons generation by combining our multimode emissive memory with existing fast optical switches.PACS numbers: 42.50. Ex, 42.50.Ct, 32.80.Qk Construction of on-demand sources of desired quantum states of light remains an overarching goal for quantum engineering. While single photons are essential resource for quantum communication protocols [1,2], multiple photon states offer an avenue for quantum computing with linear optics [3,4] and quantum simulations, e.g. in boson sampling schemes [5,6]. Since scientists are already able to manufacture complex photonic chips using femtosecond writing technologies [7], perhaps the last major roadblock to perform linear-optics simulations unattainable by classical computing is the ability to create large number of photons capable of non-classical interference [8].Prospective solutions to achieve this non-trivial, longstanding goal rely on still developing quantum dot sources [9][10][11], Rydberg blockade [12,13] as well as parametric processes such as four-wave mixing [14] and spontaneous parametric down-conversion (SPDC) routinely employed to produce heralded single photons [15]. The present technology of SPDC sources is well developed and widespread since, while operating in room temperatures, it offers high brightness and renders low noise. Nonetheless, the intrinsic feature of parametric sources is their purely stochastic operation. The probability of photon pairs generation must be kept low to suppress the contribution of higher numbers of photons. A possible way to surpass this stochastic behavior is to combine multiple sources with fast, active optical switches [16,17] to increase chances for single photon generation. In practice, setups with at most four sources using SPDC [18,19] and twelve sources with cold atoms [20] have been demonstrated. Furthermore, N parametric sources can be used to generate N heralded photons but this method requires very long waiting time [18] as the probability for N -photon state generation falls exponentially with N .Recently, Nunn et al.[21] have suggested a possible solution for enhanced generation of N -photon states in a system with N quantum memories storing heralded photons from N independent SPDC sources, and releasing them at once. Here we present a different approach where photons can be generated directly inside many emissive quantum memories driven by Raman scattering process where deposition of an excitation is heralded by a detection of a Stokes photon. Moreover, as...

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Comparative analysis of light storage in antirelaxation-coated and buffer-gas-filled alkali vapor cells

Đujić,

Buhin,

Šantić

et al. 2024

Sci Rep

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We explore light storage in antirelaxation-coated and buffer-gas-filled alkali vapor cells, employing electromagnetically induced transparency (EIT) in warm rubidium vapor. We conduct a comparative study of light storage performance under identical experimental conditions for these two cell types. Using a buffer-gas-filled cell resulted in approximately a tenfold improvement in memory efficiency and storage time compared to antirelaxation-coated cells. Moreover, we demonstrate that memory efficiency can be further enhanced by choosing a near-resonant EIT $$\Lambda$$ Λ -scheme over a resonant one. Our findings provide valuable insights for optimizing light storage, thereby contributing to the development of field-deployable quantum memories.

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How to measure diffusional decoherence in multimode rubidium vapor memories?

Cited by 16 publications

References 36 publications

Direct observation of atomic diffusion in warm rubidium ensembles

Direct observation of atomic diffusion in warm rubidium ensembles

High-Capacity Angularly Multiplexed Holographic Memory Operating at the Single-Photon Level

Comparative analysis of light storage in antirelaxation-coated and buffer-gas-filled alkali vapor cells

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