The article describes the research and development results of thin pure and doped barium titanate films with control orientation deposited on Pt substrates by electrophoretic deposition and sol-gel technique. Film temperature dependences of the electrical properties were investigated. Results showed that pure films had semiconductive behavior after heat-treatment in vacuum at 700-1000 o C. It was found that resistance to the degradation of dielectric properties can be improved by small doping (0.1-0.5 mole%) of La 2 O 3 .