2017
DOI: 10.1166/sam.2017.2316
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How to Improve Properties of Functional Films by Sol–Gel Technique

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“…It however, possesses two undesirable characteristics, namely decreased insulation resistance (degradation) under high dc voltage stresses at temperatures in excess of the Curie point of 120 o C and a high temperature coefficient of capacitance near the Curie point. Numerous studies on the effect of various modifiers on the dielectric and structural properties of barium titanate have been reported [1,4]. Barium titanate doped lightly with trivalent rear earth ions acts as a semiconductor.…”
Section: Resultsmentioning
confidence: 99%
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“…It however, possesses two undesirable characteristics, namely decreased insulation resistance (degradation) under high dc voltage stresses at temperatures in excess of the Curie point of 120 o C and a high temperature coefficient of capacitance near the Curie point. Numerous studies on the effect of various modifiers on the dielectric and structural properties of barium titanate have been reported [1,4]. Barium titanate doped lightly with trivalent rear earth ions acts as a semiconductor.…”
Section: Resultsmentioning
confidence: 99%
“…Doping with higher levels of rare-earth also yields stabilized titanates suitable for capacitor dielectrics. Previous studies by our laboratory had been reported that crackfree and polycrystalline BaTiO 3 thin films could be synthesized as a good ferroelectric by high-concentration sol-gel method and gel-aging process on substrate [1][2][3]. In the present work, semiconductor property of BaTiO 3 thin films prepared by the newly developed method is discussed.…”
Section: Introductionmentioning
confidence: 91%
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