How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC
Clément Berger,
Daniel Alquier,
Jean-François Michaud
Abstract:The electrical properties of ohmic contacts are classically investigated by using the transfer length method (TLM). In the literature, the TLM patterns are fabricated onto different substrate configurations, especially directly onto the 4H-SiC wafers. But, due to the high doping level of commercial substrates, the current is not confined close to the contact and, in this case, the specific contact resistance (SCR) value is overestimated. In this article, we propose, by the means of simulations, to investigate … Show more
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