Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices

Oo, Swe Zin; Tarazona, Antulio; Khokhar, Ali Z.; Petra, Rafidah; Franz, Yohann; Mashanovich, Goran Z.; Reed, Graham T.; Peacock, Anna C.; Chong, Harold M. H.

doi:10.1364/prj.7.000193

Cited by 18 publications

(11 citation statements)

References 43 publications

(60 reference statements)

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“…The design of the grating couplers allowed coupling of TE mode polarization only. Our measured propagation loss for a straight a-Si:H waveguide for 650 nm (w) by 400 nm (h) waveguide dimensions is 0.8 dB/cm [20].…”

Section: Measurement Results and Discussionmentioning

confidence: 87%

“…The main advantage of using the HWCVD tool in our work over plasma-enhanced chemical vapour deposition (PECVD) is the effective dissociation of the precursor gas, i.e., silane (SiH 4 ), into atomic silicon (Si) and hydrogen (H 2 ) molecules, by the hot filaments which reduces film stress due to the absence of plasma ion bombardment [19]. Thus, this allows high quality HWCVD a-Si:H thin film to be attainable at low temperature below 400°C for Back End of Line (BEOL) process compatibility [20]. In this paper, we demonstrate the fabrication and characterization of HWCVD a-Si:H interlayer slope waveguides.…”

Section: Introductionmentioning

confidence: 99%

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HWCVD a-Si:H interlayer slope waveguide coupler for multilayer silicon photonics platform

Petra¹,

Tarazona

et al. 2017

2017 IEEE 14th International Conference on Group IV Photonics (GFP)

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We present interlayer slope waveguides, designed to guide light from one level to another in a multi-layer silicon photonics platform. The waveguide is fabricated from hydrogenated amorphous silicon (a-Si:H) film, deposited using hot-wire chemical vapor deposition (HWCVD) at a temperature of 230°C. The interlayer slope waveguide is comprises of a lower level input waveguide and an upper level output waveguide, connected by a waveguide on a slope, with vertical separation to isolate other crossing waveguides. Measured loss of 0.17 dB/slope was obtained for waveguide dimensions of 600 nm waveguide width (w) and 400 nm core thickness (h) at a wavelength of 1550 nm and for transverse electric (TE) mode polarization.

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Section: Measurement Results and Discussionmentioning

confidence: 87%

Section: Introductionmentioning

confidence: 99%

HWCVD a-Si:H interlayer slope waveguide coupler for multilayer silicon photonics platform

Petra¹,

Tarazona

et al. 2017

2017 IEEE 14th International Conference on Group IV Photonics (GFP)

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“…A relatively new version of the CVD process, which has recently gained popularity to deposit various materials on planar substrates for the fabrication of photonic components, [91,92] is hot-wire CVD (HWCVD). A schematic configuration for the HWCVD process is shown in Figure 7c, where the precursors decompose on the hot filament to produce the deposition species.…”

Section: Primary Deposition and Growth Methods For Group IV Semiconductor Thin Filmsmentioning

confidence: 99%

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Aktaş

Peacock

2021

Advanced Photonics Research

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In the quest to expand the functionality and capacity of group IV semiconductor photonic systems, new materials and production methods are constantly being explored. In particular, flexible fabrication and postprocessing approaches that are compatible with different materials and allow for tuning of the components and systems are of great interest. Within this research area, laser thermal processing has emerged as an indispensable tool that can be applied to enhance and/or modify the material, structural, electrical and optical properties of group IV elemental and compound semiconductors at various stages of the production process. Herein, the recent progress made in the application of laser processing techniques to develop integrated semiconductor systems in both fiber‐ and planar‐based platforms is evaluated. Laser processing has allowed for the production of semiconductor waveguides with high crystallinity in the core and low optical losses, as well as postfabrication trimming of device characteristics and direct writing of tunable strain and composition profiles for bandgap engineering and optical waveguiding. For each platform, the current challenges and opportunities for the future development of laser‐processed integrated semiconductor photonic systems are presented.

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“…16 Despite the excellent Kerr nonlinearity of a-Si:H, the lowest reported a-Si:H linear propagation losses are about an order of magnitude higher than Si 3 N 4 . 21 In a quantum application, even with the high nonlinearity that allows a-Si:H to efficiently generate photon pairs, the high propagation loss of a-Si:H waveguides results in many of the photon pairs being lost onchip before off-chip detection. This dramatically reduces the coincidence-to-accidental rate that can be observed and severely limits its quantum applications.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Contending with crystalline silicon (c-Si), a-Si:H can be easily deposited at a lower temperature and thus incorporated in massive chip manufacturing processes 16. Despite the excellent Kerr nonlinearity of a-Si:H, the lowest reported a-Si:H linear propagation losses are about an order of magnitude higher than Si 3 N 4 21. In a quantum application, even with the high nonlinearity that allows a-Si:H to efficiently generate photon pairs, the high propagation loss of a-Si:H waveguides results in many of the photon pairs being lost onchip before off-chip detection.…”

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confidence: 99%

Photon-Pair Generation in a Heterogeneous Nanophotonic Chip

Jin

MacFarlane

et al. 2023

ACS Photonics

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Integrated silicon photonics has played an important role in advancing the applications of quantum information and quantum science. However, it is challenging to integrate all components with state-of-the-art performance using only a homogeneous platform. Here, by combining high nonlinearity and low losses in a heterogeneous silicon platform, we efficiently generate high-quality photon pairs through spontaneous four-wave mixing in a hydrogenated amorphous silicon waveguide and route them off-chip through a low-loss silicon nitride waveguide. A record high coincidence-to-accidental ratio value of 1632.6 (±260.4) is achieved in this heterogeneous design with a photon pair generation rate of 1.94 MHz. We also showcase a wide range of multichannel photon sources with a coincidence-to-accidental ratio consistently around 200. Lastly, we measure heralded single-photons with the lowest g H (2)(0) of 0.1085 ± 0.0014. Our results demonstrate the heterogeneous silicon platform as an ideal platform for the efficient generation of photon pairs and off-chip routing with low losses. It also paves the way for a future hybrid photonic integrated circuit by collecting distinct features from different materials.

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Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices

Cited by 18 publications

References 43 publications

HWCVD a-Si:H interlayer slope waveguide coupler for multilayer silicon photonics platform

HWCVD a-Si:H interlayer slope waveguide coupler for multilayer silicon photonics platform

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Photon-Pair Generation in a Heterogeneous Nanophotonic Chip

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