Hot-Target Laser Ablation is Critical for β-FeSi2 Growth on Si without Fragments

Abstract

The smooth and fragment-free films of b-FeSi 2 have been deposited on Si wafers by means of the pulsed laser deposition method. The exciting ArF excimer laser oscillated at 193 nm in wavelength where the fluence and repetition frequency were 3.5 J/cm 2 and 5 Hz, respectively. On a surface of a Si (100) substrate kept at 750°C, the deposited film consisted of a highly [100]-oriented single phase. It was found that the temperature of a e-FeSi target should be kept up to 700°C in order to obtain fragment-free epitaxial films.

Laser Machining and Functional Applications of Glass‐Ceramic Materials

“…It is known that laser ablation depends on laser wavelength, optical features of laser beam, pulse‐width regime, and optical‐thermal‐mechanical properties of the substrate. Some theoretical descriptions have been developed by many authors to generalize the stages of the ablation process …”