Hot-phonon lifetime in Al<sub>0.23</sub>Ga<sub>0.77</sub>N/GaN channels

Liberis, J.; Ramonas, M.; Šermukšnis, E.; Sakalas, P.; Szabo, N; Schuster, M.; Wachowiak, Andre; Matulionis, A.

doi:10.1088/0268-1242/29/4/045018

Cited by 11 publications

(14 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The sheet carrier concentration and electron mobility obtained by Hall measurements were 7.3 Â 10 12 cm À2 and 1150 cm 2 /V s, respectively. 12 Prior to metal deposition, the samples were cleaned and a resist mask was applied by optical lithography. Subsequently, different metal stacks were deposited by electron beam evaporation (Table I).…”

mentioning

confidence: 99%

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Schmid

Schroeter

Otto

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

Au metalization schemes were deposited on AlGaN/ GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 Â 10 À6 X cm 2 was achieved at an annealing temperature of 650 C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures. V

show abstract

mentioning

confidence: 99%

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Schmid

Schroeter

Otto

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…A summary of all these heterostructures is given in Table II. whether self-heating has an influence on current-electric field characteristics at high electric fields, we tried to calculate the hot-phonon lifetime in our samples. Because, the hotphonon effects are weaker when the lifetime is shorter and Liberis et al [33] and Barker et al [34] have shown that hotphonon effects may not be very serious and the suggested hot phonon lifetime is less than 0.3 ps. In our samples, it is estimated that the hot-phonon lifetime in our samples changes between 0.01 and 0.13 ps at high fields using a simple expression suggested by several studies to calculate hot phonon lifetime [35], [36].…”

Section: Resultsmentioning

confidence: 99%

Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

Atmaca

Narin

Kutlu

et al. 2018

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

The aim of this paper is an investigation of electric field-dependent drift velocity characteristics for Al 0.3 Ga 0.7 N/AlN/GaN heterostructures without and with in situ Si 3 N 4 passivation. The nanosecond-pulsed currentvoltage (I -V ) measurements were performed using a 20-ns applied pulse. Electron drift velocity depending on the electric field was obtained from the I -V measurements. These measurements show that a reduction in peak electron velocity from 2.01 × 10 7 to 1.39 × 10 7 cm/s after in situ Si 3 N 4 passivation. Also, negative differential resistance regime was observed which begins at lower fields with the implementation of in situ Si 3 N 4 passivation. In our samples, the electric field dependence of drift velocity was measured over 400 kV/cm due to smaller sample lengths. Then, a wellknown fitting model was fitted to our experimental results. This fitting model was improved in order to provide an adequate description of the field dependence of drift velocity. It gives reasonable agreement with the experimental drift velocity data up to 475 kV/cm of the electric field and could be used in the device simulators. ). T. V. Malin and V. G. Mansurov are with the Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia. K. S. Zhuravlev is with the Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia, and also with the

show abstract

“…Figure 24. Hot-phonon lifetime in 2DEG channels located in ZnO/Mg 0.38 Zn 0.62 O/ZnO structure (green star, present project) together with the data for 2DEG channels confined in GaN (black bullets [7], blue star [39], red triangle [41]), InGaAs (red circles [7]) and InGaN (blue square [40]). Solid curves illustrate Eq.…”

Section: Ultrafast Decay Of Hot Phonons In 2deg Channelsmentioning

confidence: 88%

Window for Optimal Frequency Operation and Reliability of 3DEG and 2DEG Channels for Oxide Microwave MESFETs and HFETs

Matulionis¹

2016

View full text Add to dashboard Cite

Air Force Materiel Command REPORT DOCUMENTATION PAGE The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS.

show abstract

Hot-phonon lifetime in Al_0.23Ga_0.77N/GaN channels

Cited by 11 publications

References 20 publications

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

Window for Optimal Frequency Operation and Reliability of 3DEG and 2DEG Channels for Oxide Microwave MESFETs and HFETs

Contact Info

Product

Resources

About

Hot-phonon lifetime in Al0.23Ga0.77N/GaN channels

Cited by 11 publications

References 20 publications

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

Window for Optimal Frequency Operation and Reliability of 3DEG and 2DEG Channels for Oxide Microwave MESFETs and HFETs

Contact Info

Product

Resources

About

Hot-phonon lifetime in Al_0.23Ga_0.77N/GaN channels