Hot Filament Chemical Vapor Deposition of Crystalline Boron Films

Abstract

This article reports on the conditions required for the growth of crystalline boron films on silicon substrates by hot filament chemical vapor deposition method. The reactive gas was 3% diborane diluted in hydrogen. The films were characterized by optical, electronic, and atomic force microscopies; x-ray diffraction; and energy dispersive, electron energy loss, Raman, x-ray photoelectron, and Auger spectroscopies. The parameters that affect the morphologies of the films have been investigated. It was concluded that faceted crystals are produced at low B 2 H 6 flows and working pressures below 200 mT. -boron is produced between 530 and 600°C. Deposition outside this range produces thin films with a wide variety of morphologies. This result indicates that the films crystallize through a process called "abnormal or discontinuous grain growth." It is assumed that this is due to the anisotropic surfaces of boron allotropes.

Correlation between Boron–Silicon Bonding Coordination, Oxygen Complexes and Electrical Properties for n-Type c-Si Solar Cell Applications

“…Figure 2 shows the results of XPS peak analysis of Si2p and O1s orbitals. The Si 0 (Si-Si Bonding) peak with a binding energy of 100 eV [20] does not show a significant difference with respect to the change in the R sheet , but in the case of boron-oxygen bonding binding energy with 533 eV [21], the peak decreases with an increase in the R sheet . In the case of boron-oxygen bonding, the B i -O i (interstitial boron-interstitial oxygen dimer) or B S -O i (substitutional boron-interstitial oxygen dimer) complex acts as a defect site.…”

Room‐Temperature Metal‐Catalyzed Ultrafast Gasification of Ultrathin Boron Flakes

“…[ 33,34 ] The Raman characterizations performed immediately after growth revealed three prominent peaks located at 498, 808, and 884 cm −1 , which agree well with the E g (weak surface mode), A 1g , and E g modes of α‐boron (Figure S3a,b, Supporting Information). [ 35–37 ]…”

“…[33,34] The Raman characterizations performed immediately after growth revealed three prominent peaks located at 498, 808, and 884 cm −1 , which agree well with the E g (weak surface mode), A 1g , and E g modes of α-boron (Figure S3a,b, Supporting Information). [35][36][37] Surprisingly, ultrafast gasification in air, that is, the spontaneous and complete vanishment of 200 nm-thick boron islands within 3 h, was revealed by AFM characterization. Figure 1c displays the evolution of the as-grown boron islands with various heights and lateral sizes.…”