Hot Electrons in Microscale Thin-Film Schottky Barriers for Enhancing Near-Infrared Detection

Nusir, Ahmad I.; Abbey, Grant P.; Hill, Avery M.; Manasreh, Omar; Herzog, Joseph B.

doi:10.1109/lpt.2016.2591261

Cited by 11 publications

(5 citation statements)

References 28 publications

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“…This involves both the judicious design of plasmonic nanostructures and a better fundamental understanding of the hot carrier generation, transport, and extraction processes. In terms of plasmonic design, ways to further enhance the field concentration and absorption in ultrathin or small nanoparticles is needed [44,48,90,150]. In terms of hot carrier transport, employing higher-quality noble metals [151,152] …”

Section: Future Developments and Perspectivesmentioning

confidence: 99%

Harvesting the loss: surface plasmon-based hot electron photodetection

2016

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Abstract:Although the nonradiative decay of surface plasmons was once thought to be only a parasitic process within the plasmonic and metamaterial communities, hot carriers generated from nonradiative plasmon decay offer new opportunities for harnessing absorption loss. Hot carriers can be harnessed for applications ranging from chemical catalysis, photothermal heating, photovoltaics, and photodetection. Here, we present a review on the recent developments concerning photodetection based on hot electrons. The basic principles and recent progress on hot electron photodetectors are summarized. The challenges and potential future directions are also discussed.

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Section: Future Developments and Perspectivesmentioning

confidence: 99%

Harvesting the loss: surface plasmon-based hot electron photodetection

2016

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“…Though the coated MoS 2 flake would not absorb the evanescent field of the waveguide mode at the telecom band, the atop Au electrode could absorb it, which yields considerable hot electrons via the surface plasmon. It is worth noting that this waveguide-integrated hot-electron photodetector extends the light–metal interaction length, which is normally bound by the thickness of metal in the free-space illuminated hot-electron photodetectors. − As exhibited in the cross-sectional schematic of Figure a, the guiding mode bounces top and bottom in the waveguide to interact with the Au–MoS 2 junction, whose length is the light–metal interaction length. Figure b shows the generation process of optically excited hot electrons in the Au–MoS 2 junction; if the energy of hot electrons emitted from Au is higher than the Schottky barrier at the interface of Au–MoS 2 junction, they could be captured before thermalization by the beneath semiconducting MoS 2 flake through the internal photoemission process, which then generates photocurrent across the MoS 2 channel.…”

Section: Introductionmentioning

confidence: 99%

Telecom-Band Waveguide-Integrated MoS₂ Photodetector Assisted by Hot Electrons

Zhang

et al. 2022

ACS Photonics

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We report a waveguide-integrated MoS2 photodetector operating at the telecom band, which is enabled by hot-electron-assisted photodetection. By integrating few-layer MoS2 on a silicon nitride waveguide and aligning one of the two Au electrodes on top of the waveguide, the evanescent field of the waveguide mode couples with the Au–MoS2 junction. Though MoS2 cannot absorb the telecom-band waveguide mode, the Au electrode could absorb it and generate hot electrons, which transfer to the beneath MoS2 channel due to the low Au–MoS2 Schottky barrier and generate considerable photocurrent. A photoresponsivity of 15.7 mA W–1 at a wavelength of 1550 nm is obtained with a low bias voltage of −0.3 V, which is also moderately uniform over the wide telecom band. A 3 dB dynamic response bandwidth exceeding 1.37 GHz is realized, which is limited by the measurement instrument. The demonstrated MoS2-based hot-electron photodetector not only outperforms other waveguide-integrated hot-electron photodetectors but also provides a strategy to extend the photodetection spectral range of two-dimensional materials. With the maturity of high-quality large-scale growth and flexible transfer of two-dimensional materials, their hot-electron photodetectors could be integrated on various photonic integrated circuits, including silicon, lithium niobate, polymers, etc.

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“…The MMs with ultrathin nanostructure can intensely interact with incident light to enhance the field concentration and PC efficiency. [255] A fast response can be achieved by reducing the distance among electrodes with a thinned substrate or by integrating organic/inorganic heterojunction with MMs-based PC devices. As for the materials to be used, although graphene shows great potential in wide spectral photodetection, the performance is deteriorated in visiblelight range due to its zero-bandgap nature and high dark current.…”

Section: Conclusion and Perspectivementioning

confidence: 99%

Metamaterials‐Based Photoelectric Conversion: From Microwave to Optical Range

Chai

Wang

Chen

et al. 2021

Laser & Photonics Reviews

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Photoelectric conversion (PC) is an essential process for the devices based on the utilization of electrical signals, such as solar cells, sensors, imaging, and communication. As an emerging research field, great advances are made in the PC devices based on the metamaterials (MMs) hitherto. The MMs exhibit unique electromagnetic resonance properties, which can be used for perfect absorbers and are promising for efficient PC from microwave to optical range, though the absorption mechanism varies with the waveband. Perfect absorption in the microwave is mainly induced by the electromagnetic polariton resonance, and surface plasmon resonance (SPR) becomes dominant as the frequency approaches to optical band. Thus, the MMs-based photoelectric devices are realized via an electronic approach in the microwave band, and are based on the SPR-induced hot carriers in the optical band. Since terahertz wave falls between the microwave and optical band, terahertz photoelectric devices exhibit unique characteristic different from the electronics and optics, while still bear similarity to both of them, which is dependent on the frequency. Hence, this review covers major advances in the aspects of fundamentals and engineering for the MMs-based photoelectric devices from microwave to optical range.

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Hot Electrons in Microscale Thin-Film Schottky Barriers for Enhancing Near-Infrared Detection

Cited by 11 publications

References 28 publications

Harvesting the loss: surface plasmon-based hot electron photodetection

Harvesting the loss: surface plasmon-based hot electron photodetection

Telecom-Band Waveguide-Integrated MoS₂ Photodetector Assisted by Hot Electrons

Metamaterials‐Based Photoelectric Conversion: From Microwave to Optical Range

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Hot Electrons in Microscale Thin-Film Schottky Barriers for Enhancing Near-Infrared Detection

Cited by 11 publications

References 28 publications

Harvesting the loss: surface plasmon-based hot electron photodetection

Harvesting the loss: surface plasmon-based hot electron photodetection

Telecom-Band Waveguide-Integrated MoS2 Photodetector Assisted by Hot Electrons

Metamaterials‐Based Photoelectric Conversion: From Microwave to Optical Range

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Product

Resources

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Telecom-Band Waveguide-Integrated MoS₂ Photodetector Assisted by Hot Electrons