Hot‐electron numerical modelling of short gate length pHEMTs applied to novel field plate structures

Abstract

SUMMARYHot-electron numerical simulations were carried out in order to simulate the DC parameters of pseudomorphic high electron mobility transistors (pHEMTs). The hot-electron effects were studied by simulating several HEMT device structures. Hot-carrier injection in the substrate and the formation of the peak of electric field in the channel were studied in detail. The inclusion of a field-plate contact in a multiple recessed pHEMT structure lowered the peak value of the electric field by 24% compared with the conventional pHEMT. These devices were modelled by solving the two-dimensional Poisson, current continuity and energy transport equations consistently with the time-independent Schr . o odinger wave equation. Appropriate Ohmic boundaries are discussed here and implemented in the simulations of pHEMT structures. A new integral approximation is used to calculate electron densities and electron energy densities for degenerate approximations.

The phase plane method for the solution of equations applied to semiconductor device modelling

“…These must be supplemented by the boundary conditions, which in this case will be Neumann conditions on the free surfaces and Dirichlet conditions on the contacts [12,13]. In addition, subsidiary equations must be used to specify the electron density n and the energy density W : Since quantum wells are formed at the interfaces of the AlGaAs, Equation (6) must be solved in one-dimensional sections in the y-direction perpendicular to the layer interfaces [14].…”

Efficient three-dimensional parallel simulations of PHEMTs

“…Development of adequate 3D simulators for HEMTs is therefore essential for a better understanding of the impact of parameter fluctuations on device characteristics for design optimization [3]. Unfortunately, 3D device simulators require large amounts of memory and high power CPUs due to the fact that calculation time increases exponentially with the number of discretization nodes in the simulation domain.…”

Κβαντική Προσομοίωση (Στατική Και Δυναμική) Ημιαγώγιμων Ετεροεπαφών

“…Τα αναλυτικά μοντέλα είναι χρήσιμα, γιατί παρέχουν μια πολύ γρήγορη εκτίμηση για τη συμπεριφορά της διάταξης. [112], [113].…”