Hot-electron noise generation in gallium-arsenide Schottky-barrier diodes

Keen, N.J.; Zirath, Herbert

doi:10.1049/el:19830580

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Cited by 14 publications

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“…The excess noise at lower frequencies is, however, frequency dependent, as reported by Keen et al [9]. In Fig.…”

Section: Measurementssupporting

confidence: 71%

Noise in Microwave and Millimeter-Wave Pt-GaAs Schottky Diodes

Zirath

Nilsen

Kollberg

et al. 1984

14th European Microwave Conference, 1984

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We report measurements of frequency and bias dependent noise of dcbiased mm-wave Schottky-barrier GaAs diodes. The measurements are performed at room temperature and at cryogenic (20 K) temperatures. It is shown, that the noise can be described as consisting of two parts. One contribution is frequency dependent, characterized with time constants between 20 and 100 Ps (varies from diode to diode). The other contribution is closely predicted by Monte-Carlo simulations for calculating hot electron noise. The frequency dependent contribution is believed to be affected by the GaAs material and/or the diode processing. The frequency independent hot electron noise can only be avoided by making sure that the fields in the epilayer are low enough. Is is recommended to use moderate bias and local oscillator drive levels for low noise mixer operation.

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“…The excess noise at lower frequencies is, however, frequency dependent, as reported by Keen et al [9]. In Fig.…”

Section: Measurementssupporting

confidence: 71%