Hot electron induced negative photoconductivity in n-InSb/GaAs with above gap illumination at low temperature

Beaulieu, Y.; Webb, J. B.; Brebner, J. L.

doi:10.1016/0038-1098(90)90829-z

Cited by 8 publications

(6 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additionally, the origin of NPC in different materials was attributed to reason such as the generation of secondary hot electrons, , formation of scattering centers, − excitation into deep defect levels, because of adsorption of moisture, surface plasmon resonance, charge carrier trapping due to moisture adsorption, the trionic effect, presence of DX (D: donor atom, X: unspecified lattice defect) like centers, formation of the built-in-electric field, , light-activated trap states, thermal broadening of electron distribution, intraband scattering, etc. However, no clear consensus has yet been reached on the origin of this phenomenon.…”

mentioning

confidence: 99%

Negative Photoconductivity: Bizarre Physics in Semiconductors

Tailor

Aranda

Saliba

et al. 2022

ACS Materials Lett.

View full text Add to dashboard Cite

Many gadgets in our daily life work on the photodetection principle. These photodetectors (such as silicon (Si), gallium arsenide (GaAs), and indium gallium arsenide (InGaAs)) work on the principle of positive photoconductivity (PPC), where conductivity increases with light illumination. However, an opposite phenomenon, where the conductivity decreases with light exposure, also known as negative photoconductivity (NPC), has been reported in various inorganic (doped-Si, PbTe, 2D materials), organic (graphene, carbon nanotubes), and organic–inorganic hybrid (halide perovskites) materials. The origin of NPC phenomena in a semiconductor is still debated though its application potential has recently reached far beyond photodetection. Here, we have critically analyzed the fundamental photophysics of NPC phenomena in semiconductors, discussed its mechanistic origin in detail, and demonstrated how it depends on various external factors, such as temperature, illumination intensity, humidity, doping concentration, etc. We also highlight the recent progress of NPC in ultrasensitive detection applications. Finally, we discussed the existing challenges and provided a roadmap about how NPC can be helpful in next-generation semiconductor optoelectronics.

show abstract

mentioning

confidence: 99%

Negative Photoconductivity: Bizarre Physics in Semiconductors

Tailor

Aranda

Saliba

et al. 2022

ACS Materials Lett.

View full text Add to dashboard Cite

show abstract

“…The causes of NPC in various materials are diverse and can be attributed to different factors. These include the formation of scattering centers, , deep defect levels, water adsorption, surface plasmon resonance, charge carrier trapping, and donor atom-like centers, among others. Some other possible reasons are the generation of secondary hot electrons, , the trionic effect, the formation of the built-in-electric field, , light-activated trap states, thermal broadening of electron distribution, and intraband scattering .…”

Section: Introductionmentioning

confidence: 99%

“…These include the formation of scattering centers, , deep defect levels, water adsorption, surface plasmon resonance, charge carrier trapping, and donor atom-like centers, among others. Some other possible reasons are the generation of secondary hot electrons, , the trionic effect, the formation of the built-in-electric field, , light-activated trap states, thermal broadening of electron distribution, and intraband scattering . However, despite numerous studies, there is still no clear consensus on the fundamental cause of this phenomenon.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Negative Self-Powered α-MoO₃/Ir/α-MoO₃ Photodetectors: Probing the Influence of Coulomb Deep Traps

Basyooni,

Tihtih,

Zaki

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Nanostructures of ultrathin 2D MoO3 semiconductors have gained significant attention in the field of transparent optoelectronics and nanophotonics due to their exceptional responsiveness. In this study, we investigate self-powered α-MoO3/Ir/α-MoO3 photodetectors, focusing on the influence of induced hot electrons in ultrathin α-MoO3 when combined with an ultrathin Ir plasmonic layer. Our results reveal the presence of both positive and negative photoconductivity at a 0 V bias voltage. Notably, by integrating a 2 nm Ir layer between post-annealed α-MoO3 films, we achieve remarkable performance metrics, including a high I ON/I OFF ratio of 3.8 × 106, external quantum efficiency of 132, and detectivity of 3.4 × 1011 Jones at 0 V bias. Furthermore, the response time is impressively short, with only 0.2 ms, supported by an exceptionally low MoO3 surface roughness of 0.1 nm. The observed negative photoresponse is attributed to O2 desorption from the MoO3 surface, resulting in increased carrier density and reduced mobility in the Ir layer due to Coulomb trapping and oxygen vacancy deep levels. Consequently, this leads to a decreased carrier mobility and diminished current in the heterostructure. Our findings underscore the enormous potential of ultrathin MoO3 semiconductors for high-performance negative conductivity optoelectronics and photonic applications.

show abstract

“…Conducting property of the film can thus be dominated by this layer. [19][20][21][22][23] Very recently, our group has reported the generation of surface photo-electromotive force (photo-EMF) in these layers upon illumination with above bandgap light. [15] The effect has been attributed to the spatial inhomogeneity in the distribution of the adsorbates and hence in the distribution of the donorlike surface sates over the surface.…”

Section: Introductionmentioning

confidence: 99%

“…InN exhibits NPC [ 7,8,24 ] like a few other semiconducting systems, such as InAs nanowires, [ 9 ] Pb 1− x Sn x Te, [ 19 ] WS 2 nanosheets decorated with Au nanoparticles [ 20 ] as well as InSb/GaAs [ 21 ] and GaAs/AlGaAs [ 22 ] heterostructures. Observation of NPC in degenerate InN was first reported by Wei et al [ 7 ] They explained the phenomenon in terms of reduction of the carrier mobility upon photoexcitation adopting a model, in which photoexcited holes occupy tail states of the valence band.…”

Section: Introductionmentioning

confidence: 99%

Understanding Negative Photoconductivity Observed in c‐Orientated InN Epitaxial Layer

Barick

Yadav

Dhar

2020

Physica Status Solidi (b)

View full text Add to dashboard Cite

The effect of temperature, environmental conditions, and the applied bias on the phototransport properties of InN epitaxial films grown on c‐sapphire substrates is investigated. The study reveals the coexistence of surface photo‐electromotive force (photo‐EMF) and negative photoconductivity (NPC) effects that result in a unique photoresponse, in which not only the magnitude but also the sign of the photoconductivity becomes bias dependent. Like surface photo‐EMF effect, which has been extensively studied in our earlier article [Appl. Phys. A 2019, 125, 84], NPC can also be attributed to the accumulation of electrons in a thin layer just below the surface. A theory has been proposed to explain the effect. According to the model, the accumulation layer is ascribed to the electrons stemming from the donor‐like surface states that arise from the attachment of certain adsorbates. Upon illumination, the natural urge to align the quasi‐Fermi level at the two sides of the boundary leads to the rearrangement of the electrons between the accumulation layer and the donor‐like surface states. This rearrangement process can lead to a reduction of the electron concentration in the accumulation layer. It should be noted that the accumulation layer, which can offer high electron mobility due to reduced dimensionality, is expected to dominate the conducting property of the entire film. Photoinduced reduction of electron concentration in the accumulation channel can thus explain the NPC effect observed in these films.

show abstract

Hot electron induced negative photoconductivity in n-InSb/GaAs with above gap illumination at low temperature

Cited by 8 publications

References 13 publications

Negative Photoconductivity: Bizarre Physics in Semiconductors

Negative Photoconductivity: Bizarre Physics in Semiconductors

High-Performance Negative Self-Powered α-MoO₃/Ir/α-MoO₃ Photodetectors: Probing the Influence of Coulomb Deep Traps

Understanding Negative Photoconductivity Observed in c‐Orientated InN Epitaxial Layer

Contact Info

Product

Resources

About

Hot electron induced negative photoconductivity in n-InSb/GaAs with above gap illumination at low temperature

Cited by 8 publications

References 13 publications

Negative Photoconductivity: Bizarre Physics in Semiconductors

Negative Photoconductivity: Bizarre Physics in Semiconductors

High-Performance Negative Self-Powered α-MoO3/Ir/α-MoO3 Photodetectors: Probing the Influence of Coulomb Deep Traps

Understanding Negative Photoconductivity Observed in c‐Orientated InN Epitaxial Layer

Contact Info

Product

Resources

About

High-Performance Negative Self-Powered α-MoO₃/Ir/α-MoO₃ Photodetectors: Probing the Influence of Coulomb Deep Traps