Hot Electron Energy and Momentum Relaxation

Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures

“…For our samples, the reduced Fermi level satisfies the (E F − E 1,2 ) ≫ k B T L condition and therefore the power loss mechanism is expected to have degenerate behavior [15,29,30]. In this case, the power loss dependencies on electron temperature for the unscreened deformation potential (non-polar) and the unscreened piezoelectric (polar) scattering are P LT np α…”

“…GaAs semi-insulating substrate (SdH) oscillations under electric field heating [15][16][17][18]. The SdH oscillation method assumes that, since the density of optical phonons is negligible below ~40 K, the energy relaxation of hot electrons can be achieved by acoustic phonon scattering (inelastic scattering).…”

“…Analysis of the power loss mechanism due to acoustic phonon scattering has been carried out in the low-and hightemperature regimes in previous reports [15][16][17][18][29][30][31][32]. At the low-temperature regime (Bloch-Grüneisen regime), the phonon population diminishes and the Pauli exclusion principle determines the allowed scattering process.…”

“…In the high electric field transport regime, the fundamentals of electronic and optoelectronic devices are governed by electron-phonon scattering, therefore determination of the energy relaxation mechanisms and electron temperature under high electric field gives useful information for the design of devices. Comparison of experimental techniques for the investigation of energy relaxation of electrons can be found in reference [15]. In heavily modulation doped QW structures, the power loss mechanisms of hot carriers via electron-phonon scatterings can be determined by analyzing Shubnikov de Haas…”

“…, the power loss is given by the linear combination of these two scattering mechanisms as [15,29,30]…”