Hot-carrier luminescence in Si

Bude, J.; Sano, Nobuyuki; Yoshii, Akira

doi:10.1103/physrevb.45.5848

Cited by 216 publications

(93 citation statements)

References 14 publications

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“…18. Note that this reverse bias light emission is of the same type as observed, e.g., at MOS breakdown sites or in MOSFET channel regions, 18 hence it generally appears if carriers in semiconductors are flowing under high fields. The spatial resolution of reverse-bias EL imaging is considerably better than that of LIT or forward-bias EL, since here is no blurring caused by lateral thermal or carrier diffusion.…”

Section: Methodsmentioning

confidence: 59%

“…17 The exact origin of this luminescence is still under discussion, a comparison of different models is presented, e.g., in Ref. 18. Note that this reverse bias light emission is of the same type as observed, e.g., at MOS breakdown sites or in MOSFET channel regions, 18 hence it generally appears if carriers in semiconductors are flowing under high fields.…”

Section: Methodsmentioning

confidence: 97%

“…However, if the ohmic shunt is very weak, a high field still may establish locally under reverse bias, again leading to a ReBEL signal, just as in the case of a MOSFET channel. 18 …”

Section: Breakdown Mechanisms a Early Breakdownmentioning

confidence: 99%

See 2 more Smart Citations

Understanding junction breakdown in multicrystalline solar cells

Breitenstein

Bauer

Bothe

et al. 2011

Journal of Applied Physics

118

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Extensive investigations on industrial multicrystalline silicon solar cells have shown that, for standard 1 X cm material, acid-etched texturization, and in absence of strong ohmic shunts, there are three different types of breakdown appearing in different reverse bias ranges. Between À4 and À9 V there is early breakdown (type 1), which is due to Al contamination of the surface. Between À9 and À13 V defect-induced breakdown (type 2) dominates, which is due to metal-containing precipitates lying within recombination-active grain boundaries. Beyond À13 V we may find in addition avalanche breakdown (type 3) at etch pits, which is characterized by a steep slope of the I-V characteristic, avalanche carrier multiplication by impact ionization, and a negative temperature coefficient of the reverse current. If instead of acid-etching alkaline-etching is used, all these breakdown classes also appear, but their onset voltage is enlarged by several volts. Also for cells made from upgraded metallurgical grade material these classes can be distinguished. However, due to the higher net doping concentration of this material, their onset voltage is considerably reduced here.

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Section: Methodsmentioning

confidence: 59%

Section: Methodsmentioning

confidence: 97%

See 1 more Smart Citation

Understanding junction breakdown in multicrystalline solar cells

Breitenstein

Bauer

Bothe

et al. 2011

Journal of Applied Physics

118

View full text Add to dashboard Cite

show abstract

“…[12][13][14][15][16][17][18] The fabrication of these devices is high-temperature compatible and can be used in standard Si designs. CMOS-compatible avalanche Si LEDs (Si CMOS Av LEDs) have emerged since the early 1990s.…”

Section: Si Cmos Avalanche Ledsmentioning

confidence: 99%

“…[12][13][14][15][16][17][18] Recently, Si CMOS lightemitting sources appeared with much higher efficiencies by implementing two and three junction Si CMOS injectionavalanche LEDs that emit at 450 to 750 nm. 19,20 They can be integrated with ease in standard CMOS circuits.…”

Section: Introductionmentioning

confidence: 99%

Optical propagation and refraction in silicon complementary metal–oxide–semiconductor structures at 750 nm: toward on-chip optical links and microphotonic systems

Ogudo

Schmieder

Foty³

et al. 2013

J. Micro/Nanolith. MEMS MOEMS

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Abstract. This paper analyzes the optical propagation and refraction phenomena in various complementary metal-oxide-semiconductor (CMOS) structures at 750 nm wavelength. Operation at these wavelengths offers the potential realizations of small microphotonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry, since Si-based optical sources, waveguides, and silicon (Si) detectors can all be integrated on a single chip. It could also increase the optical coupling efficiencies to external optical fibers. With the help of Monte Carlo and RSoft BeamPROP simulations, we demonstrate achievements with regard to optimizing vertical emission, focusing, refraction, splitting and wave guiding in 0.35 to 1.2 μm CMOS technology at 750 nm wavelength. The material properties, refractive indices, and thicknesses of various CMOS over-layers were incorporated in the simulations and analyses. The analyses show that both Si nitride and Si oxi-nitride offer good viability for developing such waveguides. Effective single-mode wave-guiding with calculated loss characteristics of 0.65 dB · cm −1 , with modal dispersion characteristics of less than 0.2 ps · cm −1 and with a bandwidth-length product of higher than 100 GHz-cm seems possible. A first iteration realization of an optical link is demonstrated, utilizing specially designed avalanche-based Si-LEDs and a specially designed first iteration CMOS waveguide. Potential applications of avalanche-based Si LEDs into microphotonic systems and MOEMS are furthermore proposed and highlighted.

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Hot-Carrier Energy Losses in a Silicon p–n–p Bipolar Transistor

Kosyachenko

Mazur

Mishchenko

1999

phys. stat. sol. (a)

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Electroluminescent emission from Si p–n–p transistors has been studied under accelerating voltages insufficient for the impact ionization of lattice atoms. It is shown that the photon energy can exceed the energy of direct transition of holes between different valence bands. The energy losses of a carrier, passed through a reverse‐biased p–n junction, are revealed to be noticeably smaller than those predicted theoretically for the deformation potential scattering. A plausible explanation of the observed discrepancies based on the restriction of the phonon wave vector by its value at the edge of the first Brillouin zone is offered.

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Hot-carrier luminescence in Si

Cited by 216 publications

References 14 publications

Understanding junction breakdown in multicrystalline solar cells

Understanding junction breakdown in multicrystalline solar cells

Optical propagation and refraction in silicon complementary metal–oxide–semiconductor structures at 750 nm: toward on-chip optical links and microphotonic systems

Hot-Carrier Energy Losses in a Silicon p–n–p Bipolar Transistor

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