Hot carrier luminescence during porous etching of GaP under high electric field conditions

Driel, A.F. van; Bret, Boris P. J.; Vanmaekelbergh, Daniël; Kelly, John J.

doi:10.1016/s0039-6028(03)00262-0

Cited by 14 publications

(11 citation statements)

References 33 publications

(59 reference statements)

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“…Photons with small diffusive penetration depths for E Ͼ E 0 can be detected only if they are emitted in the direction of the detector. 43 Photons with very large diffusive penetration depths for E Ͻ E g X can eventually reach the detector after being internally reflected inside the crystal or at the back surface of the crystal.…”

Section: Photoluminescence Measurementmentioning

confidence: 99%

Structural and photoluminescence properties of porous GaP formed by electrochemical etching

Tomioka

Adachi

2005

Journal of Applied Physics

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The structural and optical properties of porous GaP have been studied by scanning electron microscopy, spectroscopic ellipsometry, and photoluminescence ͑PL͒ spectroscopy. Porous GaP layers were fabricated by anodic etching in HF : H 2 O:C 2 H 5 OH=1:1:2 electrolyte on n-type ͑100͒ and ͑111͒A substrates. The morphology of the porous GaP layer is found to depend strongly on the surface orientation. Apart from the red emission band at ϳ1.7 eV, a supra-band-gap ͑E g X ͒ emission has been clearly observed on the porous GaP ͑111͒A sample. The anodic porous layer on the ͑100͒ substrate, on the other hand, has shown only the red emission at 300 K and both red and green donor-acceptor pair emissions at low temperatures. The correlation between the PL properties and the porous morphology is discussed. An optical transition model is also proposed for the explanation of the PL emission properties of the porous GaP samples.

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Section: Photoluminescence Measurementmentioning

confidence: 99%

Structural and photoluminescence properties of porous GaP formed by electrochemical etching

Tomioka

Adachi

2005

Journal of Applied Physics

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“…Porous semiconductors successfully prepared from Si, 1,2 GaAs, 3 GaP, 4,5 and InP 6 exhibit tunable properties that can be explored to fabricate new sensing devices. The main objective of this research direction was to control the emission properties of the porous semiconductors by controlling the pore dimension.…”

Section: Introductionmentioning

confidence: 99%

High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

Vajpeyi

Chua

Tripathy

et al. 2005

Electrochem. Solid-State Lett.

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Abstract--Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E 2 (TO) phonon peak in the Raman spectrum of porous GaN.

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“…The strong electric field at the pore fronts (due to the curvature) again ensures propagation of the pores. This mechanism is supported by the observation of light emission from the pore fronts during etching of n-type GaP [30,34]. In this case electroluminescence is caused by impact ionization resulting from the injection of hot electrons into the conduction band.…”

Section: Anodic Etching: Anisotropic Poresmentioning

confidence: 80%