Hot-carrier evaluation of a zero-cost transistor developed via process optimization in an embedded non-volatile memory CMOS technology

Devoge, Paul; Aziza, Hassen; Lorenzini, P.; Julien, Franck; Marzaki, A.; Malherbe, A.; Mantelli, M.; Cabout, T.; Delalleau, J.; Haendler, S.; Régnier, A.; Niel, S.

doi:10.1016/j.microrel.2021.114265

Cited by 5 publications

(1 citation statement)

References 9 publications

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“…This showed that created defects may be distributed over the entire surface of the dielectric and therefore can be used as a main tool for BD characterization and a global modelling of time to BD in Off-state mode. Indeed, only few investigations are given on effective electric field with VDS only, and on the Off-state current with gate-length LG [33][34][35][36][37][38]. Using the fact that applied electric field responsible for the oxide BD is strongly related to carrier energy and the amount of HC induced by II from the drain junction, we characterize roughly the impact of carrier energy by the peak electric field dependence Emax ≈ VDS/LG in thin gate-oxide structures, with same WG and variable gate-length.…”

Section: Currentsmentioning

confidence: 99%

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes

Garba-Seybou

Federspiel

Bravaix

et al. 2022

2022 IEEE International Reliability Physics Symposium (IRPS)

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We present a detailed analysis of Off-state Time Dependent Dielectric Breakdown (TDDB) under non-uniform field performed in MOSFET devices from 28nm FDSOI, 65nm SOI to 130nm nodes. Oxide breakdown in thin gate oxide is characterized under DC stress with different gate-length LG and as function of drain voltage VDS and temperature. We show that the leakage current is a better monitor for TDDB dependence under Off-mode stress whereas a new modeling is proposed. It is found that Weibull slopes β are higher in PFET due large amount of injected hot electrons than in NFET when hot holes are involved.

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